Forming method for film pattern, device, electro-optical apparatus, electronic apparatus, and manufacturing method for active matrix substrate

Abstract

A forming method for a film pattern, includes: forming a first bank layer on a substrate; forming a second bank layer on the first bank layer; patterning the first bank layer and the second bank layer thereby forming a bank having a pattern formation region including a first pattern formation region and a second pattern formation region which is connected to the first pattern formation region and has a width which is wider than that of the first pattern formation region; and forming the film pattern by depositing a functional liquid onto the pattern formation region which has been demarcated by the bank, wherein a first bank formation material and a second bank formation material are both materials including a siloxane bonds as a main chain, and the second bank formation material is a material including a fluorine bonds as a side chain.

Description

[0001] technology area [0002] The present invention relates to a method for forming a film pattern, a device, an electro-optical device, an electronic device, and a method for manufacturing an active matrix substrate. Background technique [0003] As a method of forming wiring in a predetermined pattern used in electronic circuits, integrated circuits, etc., for example, photolithography is widely used. [0004] This photolithography method requires large-scale equipment such as a vacuum apparatus and an exposure apparatus. [0005] In addition, in the above-mentioned device, complex steps are required to form wiring in a predetermined pattern, and the material usage efficiency is only about a few percent, and most of them have to be discarded. Therefore, there is a problem of high manufacturing cost. [0006] In response to such a situation, a droplet discharge method in which a liquid material is discharged in a droplet form using a liquid discharge head, that is, a metho...

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Problems solved by technology

[0018] However, as described above, when reducing the width of a part of the wide wiring formation region (pattern formation region) and increasing the amount of functional liquid flowing into the fine wiring formation region (first pattern formation region), it is difficult to properly adjust the functional liquid. inflow of

[0019] For example, when the amount of functional liquid flowing into the fine wiring formation area is too large, the film thickness of the fine wiring pattern becomes thicker than other wiring patterns, resulting in a difference in film thickness between the fine wiring part and other wiring parts

[0020] Therefore, for example, when this technique is applied to the formation of a gate wiring and a gate electrode connected thereto, it is difficult to obtain stable transistor characteristics due to the difference in film thickness between these gate wiring and the gate electrode.

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