Method and apparatus for operating series nonvolatile memory unit

Abstract

The invention relates to read of a memory cell with a charge storage structure, performed by measuring current between one carrier current node and substrate region of the memory cell. When the other parts of the memory cell store irrelated data, the read operation reduces coupling between charge capturing structures of different parts. Thus, the sensing range of the memory cell can be remarkably improved. And the invention also provides a series memory cell and a series memory cell array.

Description

technical field [0001] The present invention relates to electrically erasable programmable non-volatile memory, and more particularly to a charge trapping memory with a bias arrangement that is quite sensitive to reading the charge trapping structure of memory cells at different locations. Background technique [0002] At present, in the electronic programming and erasing non-volatile storage technology, the charge storage structure used in various fields is mainly used, such as the known electrically erasable programmable read-only memory (EEPROM) and flash memory, and some memory cell structures It can be used in electrically erasable programmable read-only memory and flash memory. As the size of integrated circuits shrinks, memory cell structures based on charge-trapping dielectric material layers are gradually attracting attention because they can be mass-produced and the process is simple. Various memory cell structures based on charge-trapping dielectric material laye...

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Problems solved by technology

The reverse read operation is a source of energy loss resulting in energy dissipation that would similarly occur in the read operation which depends on the extent to which lateral current flows through the channel in the memory cell

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