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Composition for removing a (photo)resist

A composition and photoresist technology, applied in the directions of optics, opto-mechanical equipment, photosensitive material processing, etc., can solve problems such as composition instability, and achieve the effects of providing stability, reducing corrosion, and thoroughly removing and washing away

Active Publication Date: 2007-04-18
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, due to the low boiling point of this open-chain amine, its composition is not stable, so that due to changes in weight and composition caused by its volatility over a period of time, there is a need to periodically replace the entire removal process during processing. solution trouble

Method used

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  • Composition for removing a (photo)resist
  • Composition for removing a (photo)resist
  • Composition for removing a (photo)resist

Examples

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Embodiment

[0059] The present invention is described in more detail by way of examples and ensuing comparison. As those skilled in the art would realize, the described embodiments may be changed in various different ways, all without departing from the spirit or scope of the present invention.

[0060] In the following examples, percentages or mixing ratios are by weight unless otherwise stated.

[0061]

[0062] The purpose of Trials 1 and 2 was to select the appropriate amine and glycol ether solvent protic polar solvent. The assay is described below.

[0063] First, in order to evaluate metal corrosion caused by a solvent, a photoresist-coated and developed glass was used as a sample after coating 2000 Ȧ of aluminum, molybdenum, and copper.

[0064] Secondly, in order to evaluate the photoresist removal performance, the glass coated with chromium was wet-etched after coating the photoresist, and then treated with dry etching gas to make samples with n+a-Si:H activity membrane. C...

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Abstract

The present invention relates to a photoresist remover composition used in making circuit or display device patterns, more particularly to a photoresist remover composition containing amine, solvent and anticorrosive agent, the anticorrosive agent being at least one compound selected from a group consisting of triazole compounds, mercapto compounds, organic phenol compounds containing a hydroxyl group, and a mixture thereof. The photoresist remover composition of the present invention can easily and quickly remove a resist film and can minimize corrosion of the patterned metallic circuitry.

Description

technical field [0001] The invention relates to a removal composition for removing photoresist in a photolithography process. More particularly, the present invention relates to a removal composition capable of minimizing corrosion of metal circuits during photoresist removal when used in a method of patterning metal circuits and having excellent photoresist removal performance . Background technique [0002] Photoresist is a material necessary for the photolithography process, which is used in the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI), very large-scale integrated circuits (VLSI), and such as liquid crystal displays. One of the conventional processes for image display devices of (LCD) and plasma display (PDP). [0003] However, when the photoresist is removed with a remover solution at high temperature after photolithography processing, there arises a problem that the remover solution corrodes the under...

Claims

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Application Information

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IPC IPC(8): G03F7/32G03F7/42
CPCG03F7/425G03F7/426G03F7/42
Inventor 金柄郁尹锡壹金圣培金玮溶张锡唱郑宗铉
Owner DONGJIN SEMICHEM CO LTD