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Meta-GaAs lining double-mould size distributed ImAs quantum point and manufacturing method

A size distribution, indium arsenic quantum technology, applied in the field of indium arsenic/gallium arsenide quantum dot materials, can solve problems such as limiting applications

Inactive Publication Date: 2007-05-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since these technologies often introduce defects in quantum dots, their application in device fabrication is limited.

Method used

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  • Meta-GaAs lining double-mould size distributed ImAs quantum point and manufacturing method
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  • Meta-GaAs lining double-mould size distributed ImAs quantum point and manufacturing method

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preparation example Construction

[0037] A method for preparing indium arsenic quantum dots with dual-mode size distribution on a gallium partial gallium arsenide (100) substrate of the present invention is characterized in that it comprises the following growth steps:

[0038] Step 1: Take a gallium arsenide (100) partial substrate 10, the off angle of the partial gallium arsenide (100) substrate 10 can be changed in the range of 1-5 degrees;

[0039] Step 2: grow a buffer layer 20 on the GaAs(100) substrate 10, obtain polyatomic steps 21 on the surface of the buffer layer 20, the thickness of the buffer layer 20 is 300-600 nm, and the deposition temperature is 570-630 degrees, The deposition rate is 0.5-1.5 atomic layers / second, and the source-flow ratio of the five and three groups is 15-30;

[0040] Step 3: Then grow InAs quantum dots 30 on the gallium arsenide buffer layer 20, the quantum dots in the quantum dot layer are arranged in a line and have a double-mode size distribution, the quantum dots are ar...

Embodiment

[0047] Referring to FIG. 1 , a GaAs buffer layer 20 , an InAs quantum dot layer 30 and a GaAs capping layer 40 are epitaxially grown on a GaAs (100) (2 degree to (110) plane) substrate 10 at one time. This material system can extend the laser emission wavelength to 1.3 μm or 1.5 μm, and due to the three-dimensional confinement of electrons unique to quantum dot materials, the laser with QDs as the active region has high quantum efficiency, low threshold current and high characteristic temperature and other superior performance. First grow the GaAs buffer layer 20, and control the growth conditions during the growth process as follows: the thickness of the GaAs buffer layer 20 is 500 nm, the growth temperature is 600 degrees, the deposition rate is 1.0 atomic layer / second, and the source flow ratio of the five groups and the three groups is 20. Under certain conditions, polyatomic steps will naturally form on the surface of the GaAs buffer layer 20 . Since the energy of the nu...

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Abstract

An InAs quantum of meta-GaAs substrate double-mode size distribution type consists of a meta-GaAs substrate, a GaAs buffer layer prepared on said substrate and used for obtaining multiple atomic stage from surface of said buffer layer, an InAs quantum layer prepared on said buffer layer and set with double-mode size distribution, a GaAs cover layer prepared on InAs quantum layer and used to obtain InAs quantum material.

Description

technical field [0001] The invention relates to an indium arsenide (InAs) / gallium arsenide (GaAs) quantum dot (QDs) material grown by metal organic compound vapor phase epitaxy (MOCVD), in particular to a kind of QDs grown on a partial GaAs (100) substrate An InAs quantum dot material with a bimodal size distribution. Compared with quantum dots grown on GaAs(100) substrates, this material has the advantages of long emission wavelength, narrow spectral linewidth and high spectral intensity. Background technique [0002] It is theoretically predicted that lasers with QDs as the active region have superior properties such as high quantum efficiency, low threshold current and high characteristic temperature. Recently, InAs / GaAs QDs grown on GaAs substrates have attracted extensive attention because they can extend the laser emission wavelength to 1.3 μm or 1.5 μm. In order to achieve the predicted superior performance of quantum dot lasers, it is necessary to well control the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/343H01L33/04
Inventor 梁松朱洪亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI