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Semiconductor device and method for manufacturing the same

A technology for semiconductors and devices, which is applied in the field of manufacturing semiconductor devices, and can solve problems such as large unit area of ​​SRAM units

Inactive Publication Date: 2007-05-09
NEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the disadvantage is that the SRAM cell requires a large cell area, because a memory cell requires six transistors, requires a large number of wiring, and requires element isolation between D-type MOS and n-type MOS in the same cell

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0091] [Configuration of FIN type FET]

[0092] The FIN type FET applied to the SRAM structure according to the present invention may be a field effect transistor having a semiconductor layer 303 protruding upward perpendicular to the plane of the substrate, a gate electrode 304 extending across its top on the opposite side of the semiconductor layer , a gate insulating film 305 interposed between the gate electrode 304 and the semiconductor layer 303, and a source / drain region 306 formed in the semiconductor layer 303, as shown in FIG. 4, for example.

[0093] A semiconductor layer protruding upward perpendicular to the substrate plane (hereinafter referred to as "protruding semiconductor layer") constituting a FIN FET may be provided on a base insulating film 302 on a semiconductor substrate 301, as shown in FIG. 4, for example. In the present invention, the substrate plane is an arbitrary plane parallel to the substrate, in this case the surface of the base insulating film....

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Abstract

A semiconductor device is provided with an SRAM cell unit provided with a pair of driving transistors, a pair of load transistors and a pair of access transistors. Each of the transistors is provided with a semiconductor layer protruding upward from a base flat plane, a gate electrode extending on opposing both side planes over the semiconductor layer from the upper part, a gate insulating film provided between the gate electrode and the semiconductor layer, and a pair of source / drain regions provided on the semiconductor layer. Each semiconductor layer is arranged by having its longitudinal direction in a first direction. In the adjacent SRAM cell units in the first direction, in each of the corresponding transistors, the semiconductor layer of one transistor is arranged on a center line in the first direction of the semiconductor layer of the other transistor.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, in particular, to a semiconductor memory device including an SRAM (Static Random Access Memory) and a method for manufacturing the semiconductor device. Background technique [0002] An SRAM memory cell as a semiconductor memory element has a basic structure described below. [0003] As shown in the circuit diagram in Figure 1, the SRAM memory cell consists of a flip-flop (flip flop) circuit used as an information storage unit and a control flip-flop circuit and a data line (bit line BL 1 and BL 2 ) between the conduction pair of access transistors A 1 and A 2 Composition, where information is written or read via data lines. A flip-flop circuit, for example, consists of a pair of CMOS inverters, each driven by a transistor D 1 (D 2 ) and a load transistor L 1 (L 2 )composition. [0004] access transistor A 1 (A 2 ) is connected to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8244H01L27/11H01L21/84H01L21/86H01L27/12H01L29/786
CPCH01L29/785H01L27/1108H01L21/84H01L27/11H01L27/1104H01L21/86H01L27/1203H10B10/125H10B10/00H10B10/12
Inventor 武田晃一若林整竹内洁山上滋春野村昌弘田中圣康寺岛浩一黄俐昭田中克彦
Owner NEC CORP