Carbon film coating method and device for quartz crucible for use in crystal growth

A quartz crucible and crystal growth technology, applied in crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complex gas flow control, long carbon plating time, etc., to avoid parasitic nucleation and good crystallization integrity , to avoid the effect of polycrystalline growth

Inactive Publication Date: 2007-05-16
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this method is that the carbon plating time is long, the gas flow control is complicated, and a water bath device for vaporizing absolute ethanol is required.

Method used

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  • Carbon film coating method and device for quartz crucible for use in crystal growth
  • Carbon film coating method and device for quartz crucible for use in crystal growth

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Embodiment

[0041] In this embodiment, the inner wall of the quartz crucible for crystal growth shown in FIG. 1 is coated with a carbon film, and the structure of the coating device and the installation method of the quartz crucible are shown in FIG. 2 . The coating device includes a heating furnace, a precipitation chamber 8 for placing a quartz crucible to be coated, and a gas supply controller 11; the heating furnace is a single temperature zone resistance furnace, including a furnace body 1, a heating element 4 installed on the furnace body, and temperature control and temperature measurement The heating element 4 is distributed along the axial direction of the furnace body, and the temperature control temperature detector is composed of a thermocouple 2 installed at the temperature measurement point in the furnace of the heating furnace and a FP93 temperature control indicator instrument 3 connected to the thermocouple (the temperature control accuracy is 1° C.), the lower part of the...

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Abstract

The invention discloses a quartz copple carbon film depositing method to grow crystal, which comprises the following steps: cleaning and drying the quartz copple; assembling the cleaned and dried quartz copple and film deposited device; heating sediment chamber with quartz copple at 1000-1060 Deg C; insulating; aerating high-purity inert gas into quartz copple and sediment chamber to drain the residual air; insulating at 1000-1060 Deg C; aerating methane gas; sedimenting carbon film on the inner wall of quartz copple; insulating at 1000-1060 Deg C for 40-60min; cooling slowly to indoor temperature. The carbon film depositing device is composed of heating furnace, sediment chamber to place deposited quartz copple and gas-supplying controller.

Description

technical field [0001] The invention belongs to the field of coating of quartz containers, in particular to a method and device for coating a carbon film on the inner wall of a quartz crucible used for crystal growth. Background technique [0002] AgGaS 2 , AgGaSe 2 , AgGaSeS, AgGa 1-x In x Se 2 Nonlinear optical materials, such as wide infrared transparent range, large nonlinear optical coefficient, suitable birefringence and low dispersion, etc., can perform sum frequency, difference frequency, three-wave mixing and broadband tunable infrared light parametric oscillation. CdZnTe (CZT) crystal is an excellent room temperature nuclear radiation detector material. The above-mentioned compound semiconductor materials usually use the Brigdman method to grow single crystals, which is difficult to crystallize. Ga or Cd contained in the materials will have a weak chemical reaction with the quartz crucible under high temperature conditions, resulting in melt and The adhesion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C30B11/00C04B41/87
Inventor 朱世富赵北君张建军何知宇陈宝军唐世红
Owner SICHUAN UNIV
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