Ion injection method for semiconductor device

Abstract

The invention makes public a kind of method to inject the semiconductor component ion, to separate the low energy that is injected many times through the growing procedure of extension silicon, avoid to introduce long time and high temperature and high hot process in the process of manufacturing the semiconductor, and also avoid the problems of the distributing concentration of the injected ion is to scatter and distribute towards the unwanted direction, the interface produces excessive charge as well as the problem of different interface that breaks and others.

Description

technical field [0001] The invention relates to a method for ion implantation of a semiconductor device. Background technique [0002] In the modern semiconductor device manufacturing process, ion implantation (Implantation) is already an essential and critical process. For different types of devices and processes, the element type, dose, energy and implantation sequence of ion implantation (Implantation) are very different, and the optimization of each parameter directly affects the performance of the device. [0003] For some types of devices, such as some high-voltage devices, we will use some elements with relatively large atomic weight, such as arsenic, and the implanted energy and dose are also very large. As a result, ion implantation will cause a large lattice break of the silicon substrate, which will directly affect the performance of the device. The specific method is to first perform a high-energy ion implantation on the period, as shown in Figure 1, because th...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for ion implantation of semiconductor devices, avoiding the introduction of long-term high-temperature thermal processes in the semiconductor manufacturing process, thereby avoiding the concentration of ion implantation distribution toward the non-designed direction distribution and unnecessary interface generation. The occurrence of problems such as electric charge and the fracture of the interface between different substances

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