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Strain compensating structure to reduce oxide-induced defects in semiconductor devices

A strain compensation, oxide technology, applied in semiconductor devices, semiconductor lasers, structure of active regions, etc., can solve problems such as VCSEL optical performance degradation

Inactive Publication Date: 2007-07-11
AGILENT TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, in the case of a VCSEL, strain-induced defects in oxidized layers can migrate into the material layer forming the active region of the VCSEL, thereby degrading the optical performance of the VCSEL
Furthermore, as in the case of VCSELs, these defects migrate at a faster rate when the light-emitting device is electrically biased

Method used

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  • Strain compensating structure to reduce oxide-induced defects in semiconductor devices
  • Strain compensating structure to reduce oxide-induced defects in semiconductor devices
  • Strain compensating structure to reduce oxide-induced defects in semiconductor devices

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Embodiment Construction

[0014] FIG. 1 shows a side view of an example of a semiconductor device 100 including a strain compensating structure 112 . The strain compensating structure 112 includes a strain compensating layer 104 and an oxide-forming layer 106 , wherein the oxide-forming layer 106 is adjacent to the strain compensating layer 104 and formed over the substrate 102 . The strain compensating structure 112 may optionally include an additional strain compensating layer 108 adjacent to the oxide-forming layer 106 . Strain compensating layer 104 and oxide forming layer 106 may be formed using many different semiconductor materials. In the semiconductor device 100 illustrated in FIG. 1 , the semiconductor material of the substrate 102 is gallium arsenide (GaAs), the semiconductor material of the strain compensation layer 104 is indium gallium phosphide (GaInP), and the semiconductor material of the oxide-forming layer 106 The material is aluminum gallium arsenide (AlGaAs) with a high aluminum p...

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Abstract

A strain compensating structure (112) comprises a strain compensating layer (104) adjacent an oxide-forming layer (106). The strain compensating layer (104) compensates for the change in the lattice parameter due to oxidation of at least part of the oxide-forming layer (106).

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device with a strain compensation structure. Background technique [0002] Many semiconductor-based devices, such as application specific integrated circuits (ASICs), transistors, and light emitting devices, such as lasers, employ layers of oxide materials as part of their structure. For example, a vertical cavity surface emitting laser (VCSEL) may include an oxide semiconductor layer to provide optical and / or current confinement. ASICs may include oxide layers to provide electrical isolation within the device. [0003] Semiconductor based light emitting devices such as VCSL are formed by epitaxially growing a layer of semiconductor material over a substrate. In VCSL, an oxide layer may be formed by oxidizing a layer of semiconductor material comprising a substantial amount of easily oxidizable elements. For example, aluminum (Al) is an element that is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01L29/22H01L33/14H01S5/183H01S5/32
CPCH01L33/145H01S5/3201H01S5/18313
Inventor 阿施史·唐顿迈克尔·霍华德·利里迈克尔·赖奈·梯·泰恩英-兰·昌
Owner AGILENT TECH INC