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Detection device and method of controlling detection device

a detection device and detection sensitivity technology, applied in the field of detection devices and methods of controlling detection devices, can solve the problems of difficult downsizing of anesthesia sensors disclosed in ptl 1, difficult to detect low concentration gas, and lower detection sensitivity, and achieve the effect of high-sensitivity detection

Active Publication Date: 2021-05-04
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a detection device that is small and sensitive enough to detect even small amounts of substances. The method for controlling this device allows for highly accurate detection.

Problems solved by technology

The anesthesia sensor disclosed in PTL 1 is difficult to downsize because the sensitive elements are formed separately from an electric circuit.
Downsizing of the sensitive elements leads to sensitive elements with a smaller area and thus lowers detection sensitivity, making it difficult to detect low concentration gas.
The device disclosed in PTL 2 is difficult to downsize because a substrate on which the capacitors are mounted and an electronic circuit that detects a change in the capacitance of the capacitor are separately provided.

Method used

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  • Detection device and method of controlling detection device
  • Detection device and method of controlling detection device
  • Detection device and method of controlling detection device

Examples

Experimental program
Comparison scheme
Effect test

first embodiment

[0041]A first embodiment of the present disclosure will be described using FIGS. 1 to 4. First of all, an overview of a detection device 1 according to the first embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a perspective view illustrating a configuration of an outer appearance of the detection device 1. FIG. 2A is an upper view illustrating detection units 11a and 11b of the detection device 1, and FIG. 2B is a cross-sectional view taken along line A-A in FIG. 2A.

[0042]As illustrated in FIG. 1, the detection device 1 includes a semiconductor circuit 10. The two detection units 11a and 11b are arranged side by side on the semiconductor circuit 10. As illustrated in FIGS. 2A and 2B, the detection units 11a and 11b each have a rectangular shape, and include a comb-shaped electrode 110 and a detection layer 111.

[0043]The comb-shaped electrode 110 are formed to be in a planer shape on the semiconductor circuit 10 with an insulating layer 112 interposed therebetw...

first modified example

[0086]A modified example of the present embodiment will be described with reference to FIG. 5. FIG. 5 is a perspective view illustrating a configuration of a detection device 1A according to the present modified example.

[0087]As illustrated in FIG. 5, the detection device 1A includes the detection unit 11a formed on the semiconductor circuit 10 and the detection unit 11b formed on a substrate 12 provided separately from the semiconductor circuit 10. The comb-shaped electrode 110 formed on the detection unit 11b is connected to the semiconductor circuit 10 via a conductive wiring line 13. Specifically, the detection unit 11b is connected to the semiconductor circuit 10 via the conductive wiring line 13.

[0088]As described above, in the detection device 1A according to the present modified example, not all the plurality of detection units needs to be formed on the semiconductor circuit 10. Some of the detection units (the detection unit 11b, for example) may be formed outside the semic...

second modified example

[0091]Another modified example of the present embodiment will be described.

[0092]Here, the offset adjustment capacity 101 for the detection units 11a and 11b on a single semiconductor circuit 10 is a fixed capacitive element. In this configuration, variation of the properties (the dielectric constant and the polarizability, in particular) of different materials used for the detection layers 111 of the detection units 11a and 11b needs to be taken into consideration for equalizing the capacitance values between the detection units 11a and 11b. Thus, in the present modified example, the film thicknesses (thicknesses) of the detection layers 111 used for the detection units 11a and 11b are adjusted to achieve capacitance values of the detection units 11a and 11b that are close to each other.

[0093]The detection units 11a and 11b are different from each other in the type of the material of the detection layers 111. Under such a basic condition, the capacitance values of the detection uni...

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Abstract

A detection device includes a plurality of detection units formed on a semiconductor circuit, a correction capacitive element that indicates a correction capacitance value for correcting detected capacitance values detected by the detection units, a difference acquisition circuit that acquires a difference value between each of the detected capacitance values and the correction capacitance value, and a conversion circuit that converts the difference value into a digital signal. The correction capacitive element, the difference acquisition circuit, and the conversion circuit are formed on the semiconductor circuit.

Description

TECHNICAL FIELD[0001]The present disclosure relates to a detection device that detects a detection target based on a change in capacitance, and to a method of controlling the detection device.BACKGROUND ART[0002]Detection devices that detect a detection target such as gas and liquid include a device that detects a change in capacitance due to contact with the detection target.[0003]For example, PTL 1 discloses an anesthesia sensor including: a temperature / humidity sensitive element that is sensitive to temperature / humidity but is not sensitive to anesthetic gas; and an anesthesia sensitive element that is sensitive to anesthetic gas and temperature / humidity. The anesthesia sensor performs calibration with an amount of change in the capacitance of the anesthesia sensitive element with respect to temperature / humidity offset by an amount of change in the capacitance of the temperature / humidity sensitive element with respect to the temperature / humidity.[0004]PTL 2 discloses a capacitanc...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G01N27/22
CPCG01N27/223G01N27/22G01N27/226G01N27/228A61B5/4821G01N2027/222G01N27/221A61B2562/0214A61B5/082A61B5/0531
Inventor IWATA, NOBORUARIMURA, TATSUHITO
Owner SHARP KK