Semiconductor element, semiconductor device, and method for manufacturing semiconductor element
a semiconductor and semiconductor technology, applied in the field of semiconductor elements, can solve the problem of large size of the entire semiconductor device, and achieve the effect of easy manufacturing
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first embodiment
[0046] The following will explain an embodiment of the present invention with reference to FIGS. 1 through 9(a) to 9(c).
[0047] As shown in FIG. 1, a semiconductor chip (semiconductor element) 1 of the present embodiment is a semiconductor chip of a shielding type. The semiconductor chip 1 is provided with an element circuit (not shown) on a front face side. Further, a chip front face (element front face) 1a of the semiconductor chip 1 is provided with a passivation film 3 having an opening 3a only on a portion of an electrode pad 2. The passivation film 3 is composed of an inorganic material such as SiO2 and SiN, or an organic material such as polyimide. Two or more passivation films 3 may be provided. Note that, the manufacturing process of a semiconductor device generally consists of a wafer process called as a front-end process and an assembling process (packaging) called as a back-end process. The passivation film 3 is generally formed in a last step of the wafer process, becau...
second embodiment
[0084] The following will explain another embodiment of the present invention with reference to FIGS. 10 through 13(a) and 13(b). For ease of explanation, members having the same functions as those shown in the drawings pertaining to the first embodiment above will be given the same reference symbols, and explanation thereof will be omitted here.
[0085] A semiconductor chip (semiconductor element) of the present embodiment is also a semiconductor chip of a shielding type. In this semiconductor chip 50, the passivation film 3 is provided on a chip front face 50a that has an element circuit (not shown). The passivation film 3 has the opening 3a only at a portion on the electrode pad 2.
[0086] In the present embodiment, the electrode pad 2 is electrically connected to one end of secondary wiring 51, and an insulating layer 52 is formed thereon so as to have an opening 52a to reveal an electrode pad 51a formed with the secondary wiring 51. A taper is formed on a chip side face 50c of th...
third embodiment
[0108] The following will explain a further embodiment of the present invention with reference to FIGS. 14, 15, and 16(a) to 16(d). For ease of explanation, members having the same functions as those shown in the drawings pertaining to the first and second embodiments above will be given the same reference symbols, and explanation thereof will be omitted here.
[0109] In the present embodiment, explained is a semiconductor chip of a shielding type in which a shielding layer is also formed on a front face side of a semiconductor chip (semiconductor element).
[0110] In this semiconductor chip 60, the passivation film 3 is provided on a chip front face 60a that has an element circuit (not shown). The passivation film 3 has the opening 3a only at a portion on the electrode pad 2.
[0111] In the present embodiment, as in Second Embodiment, the electrode pad 2 is electrically connected to one end of the secondary wiring 51, and an insulating layer 52 is formed thereon so as to have an openi...
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