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Method of manufacturing electronic device, electron source substrate, and image forming apparatus, and apparatus for manufacturing electronic device and electron source substrate

a technology of electron source substrate and electronic device, which is applied in the manufacture of electric discharge tubes/lamps, conductive pattern formation, and electronic device systems. it can solve the problems of reducing the yield of an electron source substrate, difficult to increase the yield of an electronic device, and increasing production costs, so as to prevent unwanted short-circuiting, improve the reproducibility of characteristics, and uniform electron emission characteristics

Inactive Publication Date: 2005-06-16
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to an electronic device manufacturing apparatus and method that can remove gas from a liquid containing a formation material of the electronic device, and apply droplets of the liquid to a specific position on a substrate. The apparatus includes a gas removal means, a droplet discharge means, and means for controlling the relative positions of the droplet discharge means and the substrate. The gas removal means removes the gas from the liquid using a closed vessel filled with a membrane that can transmit the gas. The droplet discharge means generates a bubble in the liquid using thermal energy, and discharges the liquid based on the bubble. The invention can improve the manufacturing process of electronic devices by controlling the gas removal and droplet application steps.

Problems solved by technology

However, forming the building component of the electronic device using the ink-jet method suffers the following problems.
Hence, the yield in manufacturing an electronic device is difficult to increase, and the production cost increases.
In the electron source, the uniformity of the conductive thin film of an electron-emitting element is impaired to decrease the yield of an electron source substrate.

Method used

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  • Method of manufacturing electronic device, electron source substrate, and image forming apparatus, and apparatus for manufacturing electronic device and electron source substrate
  • Method of manufacturing electronic device, electron source substrate, and image forming apparatus, and apparatus for manufacturing electronic device and electron source substrate
  • Method of manufacturing electronic device, electron source substrate, and image forming apparatus, and apparatus for manufacturing electronic device and electron source substrate

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first embodiment

[0100]FIG. 1 is a view best showing the feature of the present invention, and shows an apparatus for forming the conductive film of a surface-conduction type electron-emitting element on an electron source substrate according to the present invention. FIG. 1 is a schematic view showing an electron source substrate manufacturing apparatus according to the first embodiment of the present invention. FIG. 2 is an enlarged view showing a system for supplying a metal solution to a droplet applying unit in FIG. 1. FIG. 3 is a view showing in detail a unit for removing a dissolved gas in FIG. 1.

[0101] The arrangement of this apparatus, and an electron source substrate manufacturing method using this apparatus will be explained. In FIG. 1, reference numeral 15 denotes a stage to which an MTX substrate 101 is fixed. The stage 15 is coupled to X- and Y-direction scanning mechanisms for moving the stage 15 in the X and Y directions, and can be moved to an arbitrary position in accordance with ...

second embodiment

[0124] A method of manufacturing an image forming apparatus having a surface-conduction type electron-emitting element according to the second embodiment of the present invention will be described with reference to FIG. 5. The second embodiment is the same as the first embodiment except that the concentration of a gas dissolved in a metal solution 107 is controlled by the opening degree of a valve 117.

[0125] When the exhaust speed of a vacuum pump 106 is set constant, the concentration of the gas dissolved in the metal solution 107 depends on the stay time in a chamber 105. In the second embodiment, the three-way valve 117 is interposed between the chamber 105 and a dissolved gas analyzer 104. The opening degree of the three-way valve 117 is controlled based on a dissolved O2 concentration detected by a DO meter 113, and part of the metal solution 107 is exhausted to the outside. This changes the stay time in the chamber 105 so as to keep the concentration of the gas dissolved in t...

third embodiment

[0127] A method of manufacturing an image forming apparatus having a surface-conduction type electron-emitting element according to the third embodiment of the present invention will be described with reference to FIG. 6. The third embodiment is the same as the first embodiment except that the concentration of a gas dissolved in a metal solution 107 is controlled by a pressure value in a chamber 105.

[0128] When discharge of droplets 9 from a droplet discharge unit 6 is maintained at a predetermined speed in manufacturing an electron source substrate, the stay time of the metal solution 107 in the chamber 105 is constant. At this time, the concentration of the gas dissolved in the metal solution 107 depends on the vacuum degree in the chamber 105. From this, as shown in FIG. 6, a vacuum gauge 119 is arranged in the chamber 105. A pump control unit 110 is controlled based on the value of the pressure gauge 119 to keep the vacuum degree in the chamber 105 at a proper value.

[0129] Thi...

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Abstract

An electronic device manufacturing apparatus includes a gas removal means for removing a gas dissolved in a liquid containing the formation material of a member constituting an electronic device, a droplet discharge means for discharging droplets of the liquid, and a means for controlling the relative positions of the droplet discharge means and a substrate on which the electronic device is formed. The droplets are applied to a predetermined position on the substrate. The gas removal means includes a closed vessel filled with a membrane formed from a semi-transmitting film capable of transmitting a gas, and a vacuum unit for evacuating the closed vessel.

Description

TECHNICAL FIELD [0001] The present invention relates to an electronic device manufacturing method and a manufacturing apparatus therefor and, more particularly, to a manufacturing method for an electronic device by the step of applying, to a substrate, droplets of a liquid containing the formation material of a member which constitutes the electronic device, and a manufacturing apparatus therefor. BACKGROUND ART [0002] As a method of easily manufacturing a surface-conduction type electron-emitting element at low cost, there is conventionally proposed a method like the one disclosed in Japanese Laid-Open Patent Application No. 8-171850 in which droplets of a metal-containing solution are discharged onto a substrate using a droplet discharge unit to form element electrodes and a conductive film between them, thereby manufacturing an element, as shown in FIG. 11. In FIG. 11, reference numeral 1 denotes a substrate; 2 and 3, element electrodes; 4, a conductive film; and 5, an electron-e...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B05C5/00H01J9/02B05C13/02B05D5/12B41J2/05B41J2/175B41J2/19C23C16/06H05K3/10
CPCB41J2/175B41J2/19Y10T29/49155H01J9/027B41J2/2107
Inventor MISHIMA, SEIJI
Owner CANON KK