Method and apparatus for ALD on a rotary susceptor

Abstract

A chemical vapor deposition method and apparatus is disclosed. The process is carried out in an apparatus having a number reactive zones, each surrounded by a corresponding exhaust zone, all of which are both contained within a buffer zone. Pressure relationships are controlled such that buffer gas from the buffer zone flows into the exhaust zones and reactive gas from the reactive zones flow into the exhaust zones. As a result, cross-contamination of gases between the reactive zones is avoided.

Description

RELATED APPLICATION DATA [0001] This application claims the benefit of U.S. Provisional Patent Application 60 / 394,086, which is incorporated by reference herein in its entirety.FIELD OF THE INVENTION [0002] The invention relates to a method and apparatus for atomic layer deposition (ALD) or epitaxy, in particular a method for performing ALD using a rotary susceptor apparatus. BACKGROUND OF THE INVENTION [0003] Atomic Layer Deposition (ALD) (also referred to as Atomic Layer Epitaxy, or ALE) is a Chemical Vapor Deposition (CVD) technique. Classical CVD is based on exposing a surface to a gas mixture. The surface is heated, and the heat induces a reaction and / or decomposition of the gases. This results in the formation of a solid film layer on the surface. [0004] ALE is a species of ALD and refers to the growth of a crystalline film on the substrate surface, while ALD is more general and extends to the deposition of amorphous materials as well. In this specification the term ALD will b...

AI Technical Summary

Benefits of technology

The patent describes a method for depositing an ALD film on a substrate by passing it through a reactive zone containing reactive gas. The gas pressure in the reactive zone is higher than the gas pressure in the exhaust zone and the surrounding buffer zone containing a neutral gas. This pressure difference prevents cross-contamination of gases between the reactive zones. The substrate is then passed through a second reactive zone and a second exhaust zone, where the gas pressure is also higher than the gas pressure in the second exhaust zone. This method ensures a high-quality ALD film and minimizes contamination during the deposition process.

Problems solved by technology

The gases “a” and “b” are so mutually reactive that they cannot be present at the same time in a gas mixture, as they would spontaneously react, leading to self-ignition or formation of dust.

As a result, ALD processes tend to have low production rates and tend not to be cost effective.

Failure to effectively degas the reaction environment or remove the reactant gas “a” from the substrate prior to exposure to reactant gas “b” will result in unwanted gas phase reactions leading to non conformal deposition or to dust formation, as the mingling gases will produce freely floating particles of the material that is supposed to be deposited on the substrate.

However, in systems utilizing a single pump downstream of the reactive zone or zones, dust may form downstream toward the pump or in any system dead volume that is not well managed in terms of chemical inter-diffusion.

Accumulation of dust, even downstream of the reaction zones, creates a risk for contamination of the substrates in the reactive zone or zones.

While careful engineering and maintenance can avoid dust contamination of substrates, the interruptions for regular maintenance required to avoid dust contamination will further reduce the output and cost-effectiveness of the ALD process.

In addition, periodic maintenance is required to remove deposition film from the interior of reaction chambers used in time separation ALD methods.

The rate of deposition can be reduced by lowering the temperature of the reactor chamber's walls, but this tends to also slow the rate of degassing, hence the ALD cycle rate, further reducing deposition rate efficiency.

Currently available turntable designs are unsatisfactory for use with such highly reactive gases.

In this design, however, both excess reactive gases “a” and “b” end up in the buffer zone where they will generate some film and some dust.

Because the buffer zone is flushed with neutral gas, the build up of film and dust will take time.

However, in the long run, such a system will have a contamination problem, in particular when using highly mutually reactive gases for conformal ALD growth.

Thus, this design is adequate for protecting the chemical purity in the reactive zones, but is inadequate for preventing dust contamination of the system.

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