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Semiconductor device and manufacturing method thereof

a technology of semiconductor elements and manufacturing methods, applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., can solve the problems of ferroelectric capacitors and wiring specifications, and low coverage of alumina films, so as to achieve the effect of suppressing the deterioration of semiconductor elements

Inactive Publication Date: 2005-09-29
FUJITSU MICROELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012] An object of the present invention is to provide a semiconductor device which can suppress deterioration of a semiconductor element such as a ferroelectric capacitor, and a manufacturing method thereof.

Problems solved by technology

However, miniaturization is also highly demanded of a ferroelectric memory recently, and with miniaturization, the specifications of the ferroelectric capacitor and wiring become rigid.
Meanwhile, coverage of an alumina film is comparatively low.
For the above reasons, it cannot be said that protection of the ferroelectric capacitor is sufficient, and deterioration of the ferroelectric capacitor becomes a problem.
Therefore, high reliability is difficult to obtain.
However, such a structure does not have sufficient moisture resistance.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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first embodiment

[0024] Next, a first embodiment of the present invention will be explained. Here, a structure of each memory cell is explained with its manufacturing method for convenience. FIGS. 2A to 2G are sectional views which show a manufacturing method of a ferroelectric memory (semiconductor device) according to the first embodiment of the present invention in sequence of process steps. In FIGS. 2A o 2G, the part corresponding to two MOS transistors sharing one bit line (corresponding to the bit line 3 in FIG. 1) is shown.

[0025] In the first embodiment, a well 12 is formed on a surface of a semiconductor substrate 11 of the silicon substrate or the like first as shown in FIG. 2A. Next, an element isolation region 13 is formed on the surface of the semiconductor substrate 11 by STI (Shallow Trench Isolation), for example. Subsequently, gate insulation films 14, gate electrodes 15, cap films 16, side walls 17, source / drain diffusion layers 18 and silicide layers 19 are formed on the surface o...

second embodiment

[0042] Next, a second embodiment of the present invention will be explained. Here, a structure of a semiconductor device will be explained with its manufacturing method for convenience. FIGS. 3A to 3E are sectional views showing a manufacturing method of a ferroelectric memory (semiconductor device) according to the second embodiment of the present invention in sequence of the process steps.

[0043] In the second embodiment, after a semiconductor element (not shown) and the like are formed on a semiconductor substrate (not shown) as in the first embodiment, an interlayer insulation film 31 is formed above the semiconductor substrate as shown in FIG. 3A.

[0044] Next, a raw material film of a bottom electrode (bottom electrode film), a ferroelectric film and a raw material film of a top electrode (top electrode film) are sequentially deposited on the interlayer insulation film 31, and by patterning the top electrode film and the ferroelectric film, a top electrode 34 and a ferroelectri...

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Abstract

An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device enhanced in endurance against permeation of hydrogen and water from outside and a manufacturing method thereof. BACKGROUND ART [0002] A wiring rule in a ferroelectric memory (FeRAM) is 0.35 μm recently, and in formation of an interlayer insulation film, a plasma CVD method is mainly adopted. [0003] In order to prevent hydrogen diffusion into a ferroelectric capacitor, an alumina film directly covering the ferroelectric capacitor is formed as a hydrogen diffusion prevention film in a ferroelectric memory. [0004] However, miniaturization is also highly demanded of a ferroelectric memory recently, and with miniaturization, the specifications of the ferroelectric capacitor and wiring become rigid. Meanwhile, coverage of an alumina film is comparatively low. For the above reasons, it cannot be said that protection of the ferroelectric capacitor is sufficient, and deterioration of the ferroelectric capacitor be...

Claims

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Application Information

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IPC IPC(8): H01L21/8246H01L27/115H01L29/76
CPCH01L27/11502H01L2924/19041H01L27/11507H10B53/30H10B53/00
Inventor IZUMI, KAZUTOSHISAITO, HITOSHISASHIDA, NAOYASAIGOH, KAORUNAGAI, KOUICHI
Owner FUJITSU MICROELECTRONICS LTD