Capacitor constructions and methods of forming
a technology of capacitor construction and construction method, which is applied in the direction of capacitors, semiconductor devices, electrical equipment, etc., can solve the problems of reduced process margin and limited test design for guardband writing speed of capacitors, and achieve the effect of low rc time constan
Inactive Publication Date: 2005-12-08
MCCLURE BRENT A +7
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Benefits of technology
The invention relates to capacitor constructions and methods for making them. The technical effects of the invention include reducing the RC time constant, preventing metal silicide formation, and improving the stability of the capacitor construction. These improvements can lead to better performance and reliability of memory devices that use the capacitor constructions.
Problems solved by technology
The increased RC time constant of high cell capacitance parts may prevent such parts from passing write time sensitive tests, resulting in decreased process margin.
Also, tests designed to guardband write speed to the capacitor are limited when high cell capacitance parts are used.
Method used
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Embodiment Construction
[0017] A storage node is typically electrically connected to the lower electrode of a capacitor. Exemplary storage nodes include a conductive polysilicon plug, a tungsten plug, and other structures and materials known to those skilled in the art. However, often the electrical connection between the storage node and lower electrode does not provide an equidistant path to all points within the lower electrode. Accordingly, the resistance of the lower electrode along the various conductive paths might not be uniform across the capacitor. The conductive path length within the lower electrode multiplied by the resistivity of the lower electrode yields increasing resistance for points of increasing distance from the storage node.
[0018] The net effect of the varying resistance can be modeled as several smaller sub-capacitors in parallel. The resistance of the modeled sub-capacitors' lower electrodes increases as the distance from the storage node increases. The sub-capacitors with a highe...
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Abstract
A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.
Description
TECHNICAL FIELD [0001] The invention pertains to capacitor constructions and methods of forming capacitor constructions. The invention also pertains to memory devices including such capacitor constructions and to computer systems including such memory devices. BACKGROUND OF THE INVENTION [0002] The RC (resistance and capacitance) time constant of a capacitor is indicative of the time it takes to charge or discharge the capacitor. For a given resistance, increasing capacitance will accordingly increase charging / discharging time. However, high cell capacitance becomes more desirable as devices become smaller. The increased RC time constant of high cell capacitance parts may prevent such parts from passing write time sensitive tests, resulting in decreased process margin. Also, tests designed to guardband write speed to the capacitor are limited when high cell capacitance parts are used. [0003] As may be appreciated, improved capacitor constructions and methods of forming them are desi...
Claims
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IPC IPC(8): H01L21/02H01L27/08H10B12/00
CPCH01L27/0805H01L27/10867H01L28/91H01L28/75H01L28/84H01L27/10873H10B12/0385H10B12/05
Inventor MCCLURE, BRENT A.KURTH, CASEY R.CHEN, SHENLINGOULD, DEBRA K.BREINER, LYLE D.PING, ER-XUANFISHBURN, FRED D.WANG, HONGMEI
Owner MCCLURE BRENT A