Cleaning member and cleaning method of substrate processing equipment
a technology of substrate processing equipment and cleaning members, which is applied in the field of cleaning members, can solve the problems of reduced working ratio and long time-consuming to regulate the temperatur
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example 1
[0037] As a cleaning layer, a polytetrafluoroethylene-based film having a thickness of 25 μm (manufactured by Mitsui Fluorochemical Co., Ltd.) was used. The tensile elastic modulus (Young's modulus) under atmospheres of 25° C., 100° C., and 200° C. was 87 MPa, 71 MPa, and 45 MPa, respectively. The tensile elastic modulus (Young's modulus) was measured in accordance with a test method JIS K7127 (test speed 50 mm / minute, test piece width 10 mm, initial chuck interval 10 mm). In addition, the 180° peel adhesive strength toward the silicon wafer (mirror side) (measured in accordance with JIS Z0237) under atmospheres of 25° C., 100° C., and 200° C. was 0 N / 10 mm width in all cases.
[0038] Into a 500 mL-volume three-necked flask-type reactor equipped with a thermometer, a stirrer, a nitrogen-inlet tube, and a reflux condenser were introduced 73 parts of 2-ethylhexyl acrylate, 10 parts of n-butyl acrylate, 0.15 parts of N,N-dimethylacrylamide, 5-parts of acrylic acid, 0.15 part of 2,2′-azo...
example 2
[0046] A cleaning sheet B was prepared in the same manner as in Example 1 except that a polyethersulfone-based film having a thickness of 25 μm (“Sumilite FS-1300” manufactured by Sumitomo Bakelite Co., Ltd.) was used as a cleaning layer instead of the polytetrafluoroethylene-based film.
[0047] The tensile elastic modulus (Young's modulus) under atmospheres of 25° C., 100° C., and 200° C. were 2,034 MPa, 1,850 MPa, and 1,634 MPa, respectively. In addition, the 180° peel adhesive strength toward the silicon wafer (mirror side) under atmospheres of 25° C., 100° C., and 200° C. was 0 N / 10 mm width in all cases.
[0048] Then, after the separator at the adhesive layer side was peeled off, the above cleaning sheet B was attached to the mirror side of an 8-inch silicon wafer, a carrying member, by means of a hand roller to prepare a carrying member B with a cleaning function.
[0049] On Apparatus C, while the chuck table was maintained at the temperature of 200° C., the carrying member B wit...
example 3
[0051] A polyethersulfone-based film having a thickness of 400 μm (“Sumilite FS-1300” manufactured by Sumitomo Bakelite Co., Ltd.) was used as a cleaning layer. This film was used as a cleaning sheet C and the sheet was singly punched into an 8-inch silicon wafer shape to prepare a cleaning member C.
[0052] On Apparatus E, while the chuck table was maintained at the temperature of 200° C., the cleaning member C was carried with bringing the cleaning layer come into the carrying system, whereby the carrying system such as the chuck table was cleaned. As a result, any phenomenon that the cleaning layer strongly adhered to the contacting site was not observed and the member could be carried without problems. Moreover, as a result of visual observation on the surface of the cleaning member C which came out of the apparatus, 9 pieces of foreign matter (14 pieces on the table) were trapped and thus it was understood that foreign matter could be trapped.
[0053] Moreover, on Apparatus F, af...
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