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Semiconductor manufacturing apparatus and chemical exchanging method

a technology of semiconductors and manufacturing equipment, applied in the direction of chemistry apparatus and processes, lighting and heating equipment, cleaning using liquids, etc., can solve the problems of method not being applied to a system of supplying new chemicals,

Inactive Publication Date: 2006-03-02
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012] An aspect of the present invention is a semiconductor manufacturing apparatus comprising: a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate in a state that a temperature of the chemical is raised to a predetermined temperature, and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to the drained chemical

Problems solved by technology

However, this kind of method has a problem.
Therefore, this method cannot be applied to a system of supplying the new chemical to the processing bath after making the processing bath completely empty.
Moreover, there is another problem that the new chemical and the waste chemical may be mixed inside the processing bath.
Moreover, the temperature of the new chemical cannot be raised to the processing temperature by heat exchange, and needs to be raised by the other means.

Method used

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  • Semiconductor manufacturing apparatus and chemical exchanging method
  • Semiconductor manufacturing apparatus and chemical exchanging method
  • Semiconductor manufacturing apparatus and chemical exchanging method

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first embodiment

[0021]FIG. 1 is a schematic diagram showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

[0022] Reference numeral 11 denotes a processing bath (high-temperature circulation type chemical bath) employed for cleaning of a semiconductor substrate such as a Si wafer or the like. The processing bath 11 is filled with, for example, a sulfuric acid based high-temperature chemical 12. A semiconductor substrate 13 is dipped into the chemical 12 in the processing bath 11 and then cleaned.

[0023] The chemical 12 in the processing bath 11 is circulated by a pump (P) 14. In other words, the chemical is supplied from a bottom portion of the processing bath 11 by the pump 14, and the chemical spilling from a top portion of the processing bath 11 is supplied again from the bottom portion of the processing bath 11 through a chemical circuit. A heater (H) 15 which controls a temperature of the chemical and a filter (F) 16 through which particles ar...

second embodiment

[0044]FIG. 4 is a schematic diagram showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention. Elements like or similar to those disclosed in the first embodiment are denoted by similar reference numbers and are not described in detail here.

[0045] The present embodiment is different from the first embodiment in view of setting an addition amount of water by the water adding mechanism 32 on the basis of the measurement result of the concentration monitor 17. In addition, a valve 25 which does not allow the waste chemical to partially pass through the heat exchanger 31, but allows the waste chemical to be directly discharged, is provided between the waste chemical valve 21 and the heat exchanger 31. A valve 26 which does not allow the new chemical to partially pass through the heat exchanger 31, but allows the new chemical to be directly supplied to the processing bath 11, is provided at a new chemical side pipe of the heat exchanger 31...

modified embodiment

[0053] The present invention is not limited to the above-described embodiments. In the embodiments, water is used as an auxiliary fluid for the sulfuric acid based chemical used as a cleaning fluid and the waste chemical is heated by heat of dilution. However, combination of the chemical and the auxiliary fluid can be arbitrarily changed. For example, a chloric acid based chemical can be heated with heat of neutralization generated by adding an organic alkali thereto. An ammonium based chemical can be heated with heat of reaction generated by adding an organic acid thereto. However, a substance which is not deposited or precipitated inside the heat exchanger when the temperature is lowered, needs to be selected.

[0054] A position where the auxiliary fluid is added may be the pipe to enter the heat exchanger or in the heat exchanger. A relief valve (not shown) may be provided at the waste chemical side of the processing bath as a safety device. FIG. 2 shows only one chemical. However...

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Abstract

A semiconductor manufacturing apparatus for cleaning a semiconductor substrate comprises a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to the drained chemical regarded as a waste chemical an auxiliary fluid, and thereby heats the waste chemical, a heat exchanger in which the heated waste chemical is stored temporarily and a new chemical is allowed to flow, and which cools the waste chemical and raises temperature of the new chemical by heat exchange, and a pipe in which the new chemical having the temperature raised in the heat exchanger is supplied to the chemical bath.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2004-248970, filed Aug. 27, 2004, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates to a semiconductor manufacturing apparatus in which a semiconductor substrate is cleaned by use of a high-temperature circulation type chemical bath and a chemical exchanging method for exchanging chemicals in the high-temperature circulation type chemical bath. [0004] 2. Description of the Related Art [0005] Various types of method for cleaning a semiconductor substrate have been proposed. When a high-concentration g chemical is used, a system of repeatedly circulating and using chemicals for cleaning of a semiconductor substrate is adopted. In this circulation system, chemicals particularly heated for use are generally a mixture of sulfuri...

Claims

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Application Information

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IPC IPC(8): C23F1/00F24V30/00
CPCB08B3/00B08B3/14B08B3/08H01L21/02H01L21/304
Inventor MIYAZAKI, KUNIHIROHIGUCHI, TAKASHINAKAJIMA, TOSHIKI
Owner KK TOSHIBA
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