Method of forming a semiconductor device

Abstract

In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxidation. In a preferred embodiment, these steps are clustered and transportation between the clustered process chambers takes place in a controlled environment such as nitrogen or a vacuum. In some embodiments, the method provides an oxide layer to be used as part of the device, such as a tunnel oxide for a flash-EEPROM, or as a general gate oxide. Alternatively, the steps can be used to sculpt through oxidation various levels of a substrate, thereby allowing for embedded memory architecture. Cleaning between oxidation steps offers the advantage of providing a more defect-free oxide layer or providing access to a more defect-free level of substrate.

Description

RELATED APPLICATIONS [0001] This application is a divisional of application Ser. No. 10 / 133,132, filed Apr. 25, 2002; which is a divisional of application Ser. No. 09 / 652,723, filed Aug. 31, 2000, now U.S. Pat. No. 6,589,877; which is a divisional of application Ser. No. 09 / 017,453, filed Feb. 2, 1998, now U.S. Pat. No. 6,475,927.TECHNICAL FIELD [0002] The present invention relates to the formation of semiconductor devices. More particularly, the present invention relates to the formation of an oxide layer as part of a device or as used in the fabrication of the device. BACKGROUND OF THE INVENTION [0003] In the semiconductor industry, oxide films are used in a variety of applications. Oftentimes they are used for scratch protection and passivation purposes. Oxide films are also used as a dielectric or insulative layer, electrically separating various regions or structures. For example, an oxide film can be used as a dielectric between different levels of metal in a semiconductor dev...

AI Technical Summary

Benefits of technology

The present invention relates to the formation of semiconductor devices and the use of oxide layers in various applications. The technical effects of this invention include reducing defects in oxide films, particularly by handling contaminants that may find their way to the wafer despite a controlled environment. The invention also provides methods for forming thinner and higher quality oxide films with a high dielectric constant, which are necessary for scaling down semiconductor devices and improving their performance.

Problems solved by technology

However, during the deposition or growth of oxides, defects in the oxide can occur due to the presence of certain constituents within the layer, such as contaminants exposed to the oxide.

For example, particulate matter in the process atmosphere is one source of contamination.

Even when the oxide or other layers are developed in a “clean room” environment, wherein filters and other techniques attempt to remove particles from the environment, particles that are too small for these techniques to handle may nevertheless end up within the oxide layer.

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