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Non-volatile memory devices and methods of forming the same

a memory device and non-volatile technology, applied in the field of non-volatile memory devices and methods of forming the same, can solve the problems of the loss of data stored in the charge storing element, so as to achieve the effect of higher nitrogen concentration

Inactive Publication Date: 2009-01-22
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0006]Exemplary embodiments of the present invention are directed to non-volatile memory devices and methods of forming the same. In an embodiment thereof, the non-volatile memory device may include: a dielectric layer including an oxide layer on a substrate, the dielectric layer including at least two regions therein that ea

Problems solved by technology

With the rise of operation voltages such as a program voltage and / or an erase voltage, characteristics of an oxide layer that is formed to surround a charge storing element may become degraded and result in erroneous operation, such as loss of the data stored in the charge storing element.
However, charges stored in the charge storing element may leak through an oxide layer (e.g., an oxide layer interposed between the charge storing element and a semiconductor substrate).
Thus, stored data may be lost over time and thereby cause malfunction of the flash memory device.

Method used

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Embodiment Construction

[0015]Embodiments of the present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.

[0016]It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term ...

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Abstract

A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce / prevent charges from leaking through the free bonds and / or from being trapped by the free bonds. As a result, data retention properties and / or durability of a non-volatile memory device may be enhanced.

Description

RELATED APPLICATIONS[0001]This U.S. non-provisional patent application claims priority under 35 U.S.C §119 of Korean Patent Application 2007-0071237 filed on Jul. 16, 2007, the entirety of which is hereby incorporated by reference.FIELD OF THE INVENTION[0002]The present invention relates to semiconductor devices and methods of forming the same. More specifically, the present invention is directed to non-volatile memory devices and methods of forming the same.BACKGROUND OF THE INVENTION[0003]Non-volatile memory devices retain their stored data even when their power supplies are interrupted. Flash memory devices are well known as representative non-volatile memory devices. A flash memory device includes a unit cell with an electrically isolated charge storing element. A threshold voltage of a flash memory cell can be regulated by storing charges in the charge storing element or ejecting charges from the charge storing element, so as to store predetermined logical data in the flash mem...

Claims

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Application Information

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IPC IPC(8): H01L29/792H01L21/336
CPCH01L21/28202H01L21/28282H01L29/792H01L29/513H01L29/518H01L29/4234H01L29/40117H01L29/66833
Inventor HEO, JIN-HWAKIM, CHUL-SUNGKOO, BON-YOUNGHWANG, KI-HYUNLEE, CHANG-HYUN
Owner SAMSUNG ELECTRONICS CO LTD