57results about How to "Increase nitrogen concentration" patented technology

An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

A method for manufacturing a semiconductor device includes the steps of: forming a SiO₂ layer on a silicon substrate; forming on the SiO₂ layer an SiN film having a N/Si composition ratio smaller than the stoichiometric composition ratio of SiN by using the ALD technique; and performing a plasma-nitriding process on the SiN layer at a substrate temperature of 550 degrees C. or below.

An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is characterized as MN_x, where M is one of W, Re, Zr, and Hf, and x is in the range of about 0.7 to about 1.5. Preferably the layer is of WN_x, and x is about 0.9. Varying the nitrogen concentration in the nitride layer permits integration of different FET characteristics on the same chip. In particular, varying x in the WN_x layer permits adjustment of the threshold voltage in the different FETs. The polysilicon depletion effect is substantially reduced, and the gate structure can be made thermally stable up to about 1000° C.

A semiconductor device includes an active fin partially protruding from an isolation pattern on a substrate, a gate structure on the active fin, a source/drain layer on a portion of the active fin adjacent to the gate structure, a source/drain layer on a portion of the active fin adjacent to the gate structure, a metal silicide pattern on the source/drain layer, and a plug on the metal silicide pattern. The plug includes a second metal pattern, a metal nitride pattern contacting an upper surface of the metal silicide pattern and covering a bottom and a sidewall of the second metal pattern, and a first metal pattern on the metal silicide pattern, the first metal pattern covering an outer sidewall of the metal nitride pattern. A nitrogen concentration of the first metal pattern gradually decreases according to a distance from the outer sidewall of the metal nitride pattern.

A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.

The wet carbon fixing process of producing fine calcium carbonate with industrial fume includes a two-step alkali absorption-metathesis regeneration process to absorb CO2 in fume to form soluble carbonate quickly, synthesis with calcium hydroxide suspension after being digested and filtered to form homogeneous calcium carbonate, deposition, washing, filtering and stoving to obtain final product. On the other hand, gas after carbon fixation is dewatered and deoxidized to obtain high purity nitrogen, which may be led to nitridize furnace to synthesize nitride product. The present invention can recover low content CO2 in fume to purify fume and reduce pollution while utilizing nitrogen in fume.

The invention relates to a silicon nitride nanowire reinforced porous silicon carbide material and a preparation method of the silicon nitride nanowire reinforced porous silicon carbide material. The invention adopts the technical scheme as follows: taking 40-70 wt% of a silicon carbide powder, 15-35 wt% of a silicon powder, 1-5 wt% of a catalyst and 10-20 wt% of a nitrogen source as raw materials, additionally adding 20-30 wt% of deionized water, stirring to obtain a ceramic slurry; adding a foaming agent, which is 10-20 wt% of the raw materials, into the ceramic slurry, continuously stirring for 30-60 minutes to obtain a ceramic foam slurry; pouring the ceramic foam slurry into a mold, standing in a nitrogen environment, drying, demolding to obtain a ceramic body; putting the ceramic body in the nitrogen atmosphere, raising the temperature to 1100-1150 DEG C, and preserving heat; raising the temperature again to 1200-1600 DEG C, preserving heat; naturally cooling to obtain the silicon nitride nanowire reinforced porous silicon carbide material. The process is simple, the cost is low, the utilization ratio of the raw materials is high, the process is easy to control, the size of pores of a prepared product is even, the pore distribution is uniform, and the mechanical strength is high.

A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

There is provided an improvement in a method for manufacturing a silicon single crystal in which nitrogen is doped at a rate which is not smaller than 1×10¹⁵ atoms/cm³ and less than 4.5×10¹⁵ atoms/cm³ by pulling up a silicon single crystal 29 from a silicon melt 12 which is stored in a quartz crucible 13 and contains nitrogen, wherein the single crystal is pulled up while supplying a silicon raw material 23 which does not contain nitrogen into the silicon melt 12 in such a manner that the liquid level position of the silicon melt stored in the quartz crucible is maintained constant in accordance with the amount of growth of the single crystal. The amount of nitrogen contained in a pulled-up silicon single crystal is controlled, and hence a uniform nitrogen concentration can be obtained along the axial direction of the single crystal. The pull-up length of the silicon single crystal in which nitrogen is doped at a high concentration can be increased.

An object of the present invention is to provide a thin film transistor having a gate insulating film for suppressing a shift amount of a threshold voltage generated by use under a high temperature environment. In a thin film transistor having a channel layer made of microcrystalline silicon, a gate insulating film 140 is a film obtained by laminating a first silicon nitride film 141 having a nitrogen concentration of 6×10²¹ atoms/cc or less and a second silicon nitride film 142 having a nitrogen concentration higher than 6×10²¹ atoms/cc. Therefore, the second silicon nitride film 142 increases the blocking effect against mobile ions entering from a glass substrate 20 to make the mobile ions less likely to be stored in an interface with a channel layer 50. The first silicon nitride film 141 increases the dielectric breakdown voltage of the gate insulating film 140.

The invention relates to an aluminum extrusion die and its surface strengthening and toughening treatment process. The process aims to improve surface strengthening and toughening performance of the aluminum extrusion die. By a two-stage process of doping of N before multi-element penetration of O-S-N, thicknesses of a strengthened layer and a diffusion layer in a penetration layer are both increased at different levels in comparison with an isothermal method, and it is ensured that bonding ability of the penetration layer and a matrix is better. Hardness gradient of the penetration layer is milder, penetration layer peeling time is put off, and life of the die is effectively prolonged. In addition, based on the two-stage process, thickness and strength of the diffusion layer are both raised effectively by the use of a Ce/La rare earth compound for catalysis and by the use of an NH4Cl powder for cleaning and penetration treatments; and an antifriction complex phase layer containing Fel-xS and Fe3O4 phases and a strengthened layer containing Fe2-3N, gamma'-Fe4N and other high hardness and toughness phases can be obtained. Thus, the penetration layer satisfies ideal wearing layer conditions of tribological requirements.

A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

The invention relates to a flame arrester with a self-cleaning function. The flame arrester mainly solves the problem that a flame arrester in the prior art is likely to be blocked. The flame arresterwith the self-cleaning function comprises a flame arrester shell, at least two flame retardant elements, a gas injection channel and a gas throttle valve, the flame retardant elements are distributedon the two sides in the flame arrester, a gas injection channel is arranged between the flame retardant elements, a gas injection pipeline is arranged on the gas injection channel, and a gas throttlevalve is arranged on the portion, outside the flame arrester shell, of the gas injection pipeline. By adopting the technical scheme, the problem is well solved, and the flame arrester can be used forarresting flame propagation.

The invention relates to the technical field of heat treatment processes and particularly relates to a process method for improving surface quality of quenched-and-tempered steel nitrided members. Themethod specifically adopts a preoxidation three-stage-process rapid nitriding process and comprises three stages, i.e., rigid-nitriding intense nitriding, diffusion and adjusting nitrogen feeding. Intense nitriding is carried out in a nitriding environment with low ammonia gas decomposition rate, so that the nitrogen concentration of workpiece surfaces is increased; diffusion is carried out in anitriding environment with high ammonia gas decomposition rate, so that the accumulation of surface nitrides is avoided; the rate and temperature of decomposition of ammonia gas are lowered, and the nitrogen concentration of the workpiece surfaces is adjusted. Through an improvement on a nitriding process, the surface hardness of workpieces is improved to 650HV1 to 680HV1, the surface brittlenessis a level 2 or less, and 80% or more of results display that the surfaces of the workpieces are free of obvious brittle cracks.

A process for producing citric acid/citrate for use in producing citric acid, comprising the steps of continuously feeding to a fermenter containing a yeast capable of transforming glucose to citric acid by fermentation, in the presence of a nutrient medium and oxygen, sugar, especially glucose as a C source and at least one ammoniun compound as an N source fermenting the sugar to citric acid in said fermenter at a temperature, a pH and with a residence time sufficient to transform at least a major part of the sugar continuously fed to said fermenter to citric acid continuously withdrawing fermentation product from said fermenter recovering citric acid/citrate from said fermentation product controlling a C/N ratio fed to said fermenter to correspond to a molar ratio of glucose to ammonium compounds of 12 to 22 during fermentation of the glucose to citrate.