71results about How to "Reduce total nitrogen concentration" patented technology

Disclosed herein is a method of operating a polymerization reactor for a polymerization reaction comprising modifying a recycle gas composition to increase the heat capacity of the recycle gas wherein the recycle gas composition is modified by reducing or eliminating the nitrogen concentration in the recycle gas. In an embodiment, the nitrogen concentration is reduced or eliminated by reducing or eliminating one or more nitrogen input sources to the polymerization reactor and replacing the nitrogen with an alternate inert fluid (a gas or liquid that is inert to the catalyst and reactants). The alternate inert fluid has a higher heat capacity and a higher molecular weight than nitrogen. In an embodiment, the nitrogen utilized to convey a catalyst into the polymerization reactor is replaced with an alternate inert fluid. In an embodiment, the alternate inert fluid is ethane, propane, isobutane, or combinations thereof.

Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms / cm3 or less is provided.

Disclosed herein is a method of operating a polymerization reactor for a polymerization reaction comprising modifying a recycle gas composition to increase the heat capacity of the recycle gas wherein the recycle gas composition is modified by reducing or eliminating the nitrogen concentration in the recycle gas. In an embodiment, the nitrogen concentration is reduced or eliminated by reducing or eliminating one or more nitrogen input sources to the polymerization reactor and replacing the nitrogen with an alternate inert fluid (a gas or liquid that is inert to the catalyst and reactants). The alternate inert fluid has a higher heat capacity and a higher molecular weight than nitrogen. In an embodiment, the nitrogen utilized to convey a catalyst into the polymerization reactor is replaced with an alternate inert fluid. In an embodiment, the alternate inert fluid is ethane, propane, isobutane, or combinations thereof.

The invention discloses a method for ecological restoration and water quality conservation of river water. according to the method, an aeration oxygenation system consists of a solar cell panel, a support connector, an air pump, an aeration tube and an air distribution plate and is used for maintaining the dissolved oxygen level in the water; an ecological floating bed system consists of a strong buoyancy carrier and an emergent aquatic plant and is used for removing pollutants out of water and gathering and transferring heavy metal; and a filler system is used for providing a lot of adhesion habitats for microbial flora, phytoplankton, protozoon and tiny metazoan so as to co-build and form a biological membrane which efficiently and quickly purifies the pollutants. By adopting the method, the organic matters such as COD, nitrogen, phosphorus and the like, and other pollutants in the water can be efficiently removed, the water is purified, an ecological system of the river way is improved, and the self-cleaning capacity of the water is restored.

A method for manufacturing a semiconductor device includes the steps of: forming a SiO2 layer on a silicon substrate; forming on the SiO2 layer an SiN film having a N / Si composition ratio smaller than the stoichiometric composition ratio of SiN by using the ALD technique; and performing a plasma-nitriding process on the SiN layer at a substrate temperature of 550 degrees C. or below.

Systems and methods are provided for synthesizing low nitrogen concentration organic liquids from biomass, such as algae, the organic liquids being suitable for refining into fuels and other chemicals. The biomass together with a solvent that is immiscible with water at room temperature are subjected to a subcritical hydrothermal treatment to disrupt cell structure and transform the biomass into a gas phase, a bio-oil phase, an aqueous phase and a solid phase. The aqueous phase contains most of the nitrogen. The resulting multi-phasic mixture can be separated into four phases, including an aqueous phase and the organic liquid which consists of bio-oil dissolved in the solvent. Refined organic liquid can be recycled into the hydrothermal treatment as the solvent. The subcritical hydrothermal treatment can be performed at a generally low temperature and followed by a second hydrothermal treatment at a higher temperature.

A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017 / cm3 and preferably less than 1×1017 / cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy0.50<x<0.68, 0.08<y<0.35, and 0.08<z<0.35, or  (1)0.40<x≦0.50, 0.15<y<0.40, and 0.15<z<0.35.  (2)x, y, and z preferably satisfy 0.53<x<0.65, 0.1<y<0.3, and 0.1<z<0.3.

The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier / etch stop layer is provided with a significantly reduced nitrogen concentration at an interface in contact with said low-k dielectric material. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in said low-k dielectric layer is significantly suppressed, so that in a subsequent photolithographic step, interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.

A multi-point water inflow zeolite biology combined adsorption regenerative sewage disposal technology relates to removal and disposal of pollutants in urban sewerage, sewage and industrial organic waste water (comprising organism, ammonia nitrogen and phosphor). The multi-point water inflow zeolite biology combined adsorption regenerative sewage disposal technology is composed of zeolite biological combined adsorption regenerative technology, denitrify / nitrify (A / O) denitrification technology, chemical dephosphorization method, not only has retained the advantage of zeolite biological combined adsorption regenerative technology, but also has raised removal efficiency of ammonia nitrogen and total nitrogen, increases functions of chemical dephosphorization, and raises the regenerative effect of zeolite powder effectively through multi-point water inflow. The technology of the invention applies to city waste water and sewage, processing organism, ammonia nitrogen, total nitrogen and phosphor of biochemical industrial organic waste water to reach the standards, has advantages of saving investment, low working costs, a little occupation area, operation flexibilities, and has raised the processing of remaining mud, has good economy, environment and social benefit.

The invention relates to a wastewater treatment device and in particular relates to a wastewater treatment device and a wastewater treatment method for realizing deep wastewater denitrification based on a sequencing batch type A / O (Anoxic / Oxic) linkage system. The device comprises a regulating reservoir, an SBR (Styrene Butadiene Rubber) reaction tank, an intermediate reservoir and a membrane bio-reactor (MBR) / moving bed biofilm reactor (MBBR) reaction tank, wherein the SBR reaction tank comprises an SBR reaction tank anoxic zone and an SBR reaction tank aerobic zone. The method for treating wastewater by using the device comprises the following steps: starting the SBR reaction tank linkage water inlet to carry out a nitrosation reaction; starting the MBR / MBBR reaction tank to carry out an anaerobic ammonia oxidation reaction. The device and the method have the advantages that the ammonia nitrogen loading resistance is high, the nitrosation reaction and anaerobic ammonia oxidation reaction can be rapidly realized and stabilized, the process cost is saved and the like.

A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder to sublimation in the hydrogen ambient growth chamber while, heating and then maintaining a silicon carbide seed crystal in the hydrogen ambient growth chamber to a second temperature below the temperature of the source powder, at which second temperature sublimed species from the source powder will condense upon the seed crystal, continuing to heat the silicon carbide source powder until a desired amount of silicon carbide crystal growth has occurred upon the seed crystal, while maintaining an ambient concentration of hydrogen in the growth chamber sufficient to minimize the amount of nitrogen incorporated into the growing silicon carbide crystal, and while maintaining the source powder and the seed crystal during sublimation growth at respective temperatures high enough to increase the number of point defects in the growing crystal to an amount that renders the resulting silicon carbide crystal semi-insulating.

The invention discloses a method for preventing and controlling non-point source pollution of farmland by using rice-crab coculture. The method is used for solving the problem of the existing paddy fields that the non-point source pollution is serious, and river crabs are put in paddy fields in accordance with the theory that rice nourishes the crabs, the crabs nourish the rice, and the rice and the crabs are symbiotic. The method mainly comprises the steps of juvenile crab centralized temporary-culture management, rice seedling raising management, river crab paddy-field-stocking management and river crab centralized-fattening management, and a whole technical process starts from river crab offspring preparation and rice seed selection and breeding and ends with river crab packaged on-sale and rice harvesting. According to the method, the nitrogen concentration of water surface of the paddy fields can be obviously lowered, the actions of purifying water quality and preventing and treating the non-point source pollution of the paddy fields are achieved, and the size and yield of the river crabs are increased to certain extent, so that the method has remarkable environmental and economic benefits, and rice planting, river crab culture and ecological environments can win together.

Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a region of concentrated nitrogen. Oxidizing the structure and redistributing the nitrogen is performed via radical oxidation. Nitrogen is added to the oxide structure. The region of concentrated nitrogen helps to regulate the depth of the added nitrogen.

A system includes a gasifier configured to gasify a gasification fuel during a gasification mode. The system also includes a first injector configured to inject a heat control fuel and an oxygen enriched air into the gasifier for combustion during a heat control mode. The heat control fuel is the same or different from the gasification fuel, and the oxygen enriched air includes air enriched with additional oxygen.

A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

A low-temperature liquefied gas tank is a low-temperature liquefied gas tank including a storage tank configured to store a low-temperature liquefied gas, and a re-liquefaction facility configured to liquefy boil off gas generated in the storage tank. A returning unit configured to return a re-liquefaction boil off gas liquefied in the re-liquefaction facility to the storage tank is provided. The returning unit has a distributor disposed under a liquid surface of the low-temperature liquefied gas stored in the storage tank and configured to eject the re-liquefaction boil off gas into the low-temperature liquefied gas.

The present invention provides an optimization method for a fertilizer wastewater treatment process. The original process comprises the following steps of: homogenizing and weight-equalizing fertilizer wastewater by an adjusting tank, pumping the wastewater from the adjusting tank to a primary aeration tank by a wastewater pump to remove part of COD (chemical oxygen demand) and toxic and harmful substances in the wastewater; and introducing the primarily settled wastewater into the front denitrification biological denitrogenation section and subsequent physical and chemical advanced treatmentsection of an anoxic tank / aerobic tank, and simultaneously adding high-efficiency microbial flora to a biochemical system. By optimizing the dissolved oxygen concentration of the primary aeration tank and nitrification liquid reflux ratio R and sludge reflux ratio r2 of the front denitrification biological denitrogenation section of the anoxic tank / aerobic tank, the optimization method improves the total nitrogen removal rate of the fertilizer wastewater from 41.1% to 66.7% (increased by 25.6%) and improves the COD and ammonia nitrogen removal rates to 95.8% and 98.8%, respectively.

A method for modifying a surface of a substrate to be processed, by utilizing plasma includes the steps of adjusting a temperature of the substrate from 200° C. to 400° C., introducing gas including nitrogen atoms or mixture gas including inert gas and the gas including nitrogen atoms into a plasma process chamber, adjusting pressure in the plasma process chamber above 13.3 Pa, generating plasma in the plasma process chamber, and injecting ions equal to or smaller than 10 eV in the plasma into the substrate to be processed.

Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms / cm3 or less is provided.

The present disclosure relates to methods of reducing nitrogen and phosphorus recycled back to a liquid stream by subjecting digested sludge to post aerobic digestion (PAD) in the presence of at least one alkaline compound containing calcium.

The invention discloses a method for synthesizing low-nitrogen high-purity silicon carbide powder, and relates to the technical field of silicon carbide synthesis. The method comprises the steps of filling the raw material powder into a crucible with an exhaust hole, putting the crucible into a furnace, vacuumizing a furnace chamber, and heating; then injecting high-purity H2 into the furnace chamber to 750-850 mbar, and then vacuumizing the furnace chamber to 4.5*10<-6>-5.5*10<-6>mbar; and repeating for multiple times, heating the furnace chamber, injecting high-purity Ar and H2 into the furnace chamber according to the flow ratio of (9-10.5): 1, carrying out synthetic reaction and conversion synthetic reaction, and cooling to room temperature under the protection of Ar and H2 after the reaction is finished. The nitrogen concentration in the powder synthesis process can be effectively reduced, and the powder purity is improved; and the mixed raw materials are effectively prevented from escaping from the crucible in the powder synthesis process, and the reaction efficiency of the powder is improved.

In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

A system includes a gasifier injector configured to inject a heat control fuel and a mixed air into a gasifier for combustion during a heat control mode. The heat control fuel is the same or different from the gasification fuel, and the system is configured to create the mixed air from independent supplies of oxygen and nitrogen.

In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

A method for manufacturing a semiconductor device includes the steps of: forming a SiO2 layer on a silicon substrate; forming on the SiO2 layer an SiN film having a N / Si composition ratio smaller than the stoichiometric composition ratio of SiN by using the ALD technique; and performing a plasma-nitriding process on the SiN layer at a substrate temperature of 550 degrees C. or below.

The invention discloses a regulating method of cell cycle synchronization of haematococcus pluvialis. The method includes the following steps that mature haematococcus pluvialis chlamydospores synchronously germinate to produce red flagellated cells in a nitrogen limited culture medium and in the presence of strong light; the red flagellated cells undergo synchronous sporangium formation to form chlamydospores, and the process repeats periodically to realize that the haematococcus pluvialis is in the synchronous growth state in multiple cell cycles. The invention further provides an application. The application includes that the mature haematococcus pluvialis chlamydospores are put in the nitrogen limited culture medium, strong light and air rich in carbon dioxide are provided, and the chlamydospores form chlamydospores again via synchronous germination and synchronous sporangium formation; part of the formed chlamydospores are harvested directly while the other part is added into a new culture medium for continuous culture; periodically repeated culture is conduced according to the method. The method is simple, haematococcus pluvialis cell masses high in synchronization degree in multiple cell cycles can be obtained, and haematococcus pluvialis chlamydospores high in astaxanthin content can be obtained quickly.

A method for engineering a transgenic plant that replicates the nitrogen fixation mechanism of photosynthetic bacteria, such as cyanobacteria, or that of other bacteria, by targeting to or expressing in plant plastids bacterial nif (nitrogen fixation) genes is provided. A method for reducing the overall concentration of nitrogen in soil is provided using a plant that replicates the nitrogen fixation mechanism of photosynthetic bacteria. Progeny of a plant that replicates the nitrogen fixation mechanism of photosynthetic bacteria is also provided.

A bonded body includes a supporting substrate, a piezoelectric material substrate of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and a bonding layer bonding the supporting substrate and piezoelectric material substrate. The material of the bonding layer is silicon oxide. Provided that the bonding layer is divided into a piezoelectric material substrate-side bonding part and supporting substrate-side bonding part, the piezoelectric material substrate-side bonding part has a nitrogen concentration higher than a nitrogen concentration of the supporting substrate-side bonding part.