71results about How to "Reduce total nitrogen concentration" patented technology

Disclosed herein is a method of operating a polymerization reactor for a polymerization reaction comprising modifying a recycle gas composition to increase the heat capacity of the recycle gas wherein the recycle gas composition is modified by reducing or eliminating the nitrogen concentration in the recycle gas. In an embodiment, the nitrogen concentration is reduced or eliminated by reducing or eliminating one or more nitrogen input sources to the polymerization reactor and replacing the nitrogen with an alternate inert fluid (a gas or liquid that is inert to the catalyst and reactants). The alternate inert fluid has a higher heat capacity and a higher molecular weight than nitrogen. In an embodiment, the nitrogen utilized to convey a catalyst into the polymerization reactor is replaced with an alternate inert fluid. In an embodiment, the alternate inert fluid is ethane, propane, isobutane, or combinations thereof.

A manufacturing method for a CMOS semiconductor device in which gate electrodes are adjusted to have different work function values comprises forming an device region of a first and second conductivity type for forming first and second MOS semiconductor element devices, respectively, in a semiconductor substrate, forming a gate insulator, forming a laminated film comprising a molybdenum film and nitrogen containing film for doping nitrogen into molybdenum, doping nitrogen from the nitrogen containing film into molybdenum, processing the laminated film into gate electrodes of the first and second MOS semiconductor element devices, removing the nitrogen containing film from the gate electrodes of the second MOS semiconductor element device and covering the gate electrode of the first MOS semiconductor element devices with a nitrogen diffusion preventing film, and reducing the nitrogen concentration in molybdenum of the gate electrodes of the second MOS semiconductor element device.

A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder to sublimation in the hydrogen ambient growth chamber while, heating and then maintaining a silicon carbide seed crystal in the hydrogen ambient growth chamber to a second temperature below the temperature of the source powder, at which second temperature sublimed species from the source powder will condense upon the seed crystal, continuing to heat the silicon carbide source powder until a desired amount of silicon carbide crystal growth has occurred upon the seed crystal, while maintaining an ambient concentration of hydrogen in the growth chamber sufficient to minimize the amount of nitrogen incorporated into the growing silicon carbide crystal, and while maintaining the source powder and the seed crystal during sublimation growth at respective temperatures high enough to increase the number of point defects in the growing crystal to an amount that renders the resulting silicon carbide crystal semi-insulating.

Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a region of concentrated nitrogen. Oxidizing the structure and redistributing the nitrogen is performed via radical oxidation. Nitrogen is added to the oxide structure. The region of concentrated nitrogen helps to regulate the depth of the added nitrogen.

Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms / cm3 or less is provided.

In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

A method for manufacturing a semiconductor device includes the steps of: forming a SiO2 layer on a silicon substrate; forming on the SiO2 layer an SiN film having a N / Si composition ratio smaller than the stoichiometric composition ratio of SiN by using the ALD technique; and performing a plasma-nitriding process on the SiN layer at a substrate temperature of 550 degrees C. or below.