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Phase change memory device and fabrication method thereof

a phase change memory and fabrication method technology, applied in the direction of semiconductor devices, bulk negative resistance effect devices, electrical appliances, etc., can solve the problems of reducing the life of the device, and reducing the heat radiation efficiency of the nitride material of the insulating spacer, etc., to achieve excellent heat radiation efficiency

Inactive Publication Date: 2011-03-31
SK HYNIX INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The patent text describes a phase change memory device with a bottom electrode contact that has excellent heat radiation efficiency and a method of manufacturing the same. The device is also capable of refrigerating a phase change material layer with high speed. The technical effects of this invention include improved heat transfer and faster refrigeration of the phase change material layer, which can enhance the performance and reliability of the phase change memory device.

Problems solved by technology

In particular, in a reset operation of the PCRAM which phase-changes the phase change material in an amorphous state, an enormous amount of current should be applied for a short time and an amount of reset current affects a life span, a sensing margin and shrinkage of the device.
However, the nitride material of the insulating spacer is inefficient to radiate the heat because of the nature of the material.
Furthermore, as the thickness of the insulating spacer is increased to reduce the diameter of the BEC, the speed of the heat radiation becomes further delayed such that the operation speed of the device is lowered.

Method used

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  • Phase change memory device and fabrication method thereof
  • Phase change memory device and fabrication method thereof
  • Phase change memory device and fabrication method thereof

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BRIEF DESCRIPTION OF THE DRAWINGS

[0021]The above and other aspects, features and other advantages of the subject matter of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0022]FIGS. 1a and 1b are sectional views illustrating a method of manufacturing a conventional phase change memory device;

[0023]FIG. 2 is a diagram explaining an efficiency of a heat radiation in the conventional phase change memory device; and

[0024]FIGS. 3 through 7 are sectional views illustrating a method of manufacturing a phase change memory device according to an exemplary embodiment.

DETAILED DESCRIPTION

[0025]Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of exemplary embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / ...

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Abstract

A phase change memory device is provided that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. 119(a) to Korean application number 10-2009-0093603, filed on Sep. 30, 2009, in the Korean Patent Office, which is incorporated by reference in its entirety as if set forth in full.BACKGROUND[0002]1. Technical Field[0003]The inventive concept relates to a semiconductor memory device and, more particularly, to a phase change memory device and a method of manufacturing the same.[0004]2. Related Art[0005]A phase change material has a different status of an amorphous state or a crystalline state depending on a temperature. The phase change material has a lower resistance in a crystalline state than in an amorphous state and has a regular atomic arrangement. The phase change material may be a chalcogenide (GST)-based material which is a compound comprised of germanium (Ge), antimony (Sb) and tellurium (Te).[0006]A phase change random access memory (PCRAM) is a memory device which stores a...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L47/00H01L21/06H10N80/00
CPCH01L45/1233H01L45/126H01L45/06H01L45/16H01L27/2409H01L45/144H10B63/20H10N70/231H10N70/8413H10N70/826H10N70/8828H10N70/011H10N70/068
Inventor LEE, KEUM BUMCHAE, SU JINSEO, HYE JIN
Owner SK HYNIX INC