Package structure having MEMS element
a technology of packaging structure and element, applied in the direction of transducer details, semiconductor devices, semiconductor/solid-state device details, etc., can solve the problems of increasing high cost of lid b>12/b> by drilling, and inability to meet the demand for miniaturization. , to achieve the effect of reducing the thickness of the overall structur
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first embodiment
[0027]FIGS. 2A to 2F are cross-sectional views showing a package structure having at least a Micro Electro Mechanical System (MEMS) element according to a first embodiment of the present invention.
[0028]Referring to FIG. 2A, a wafer 20 is prepared, which has a plurality of electrical connection pads 201 and a plurality of MEMS elements 202. It should be noted that only a portion of the wafer is shown in FIG. 2A.
[0029]Referring to FIG. 2B, a plurality of lids 21 is disposed on the wafer 20 for covering the MEMS elements 202, respectively. The wafer 20 is made of silicon. The MEMS elements 202 are gyroscopes, accelerometers or RF MEMS elements. The lids 21 are made of a conductive material or a non-conductive material such as glass, silicon, metal or ceramic. A metal layer 211 or a plurality of bonding pads, as shown in FIG. 2B′, is further provided on each of the lids 21 by such as sputtering, which are made of Al, Cu, Au, Pd, Ni / Au, Ni / Pd, TiW / Au, Ti / Al, TiW / Al, Ti / Cu / Ni / Au or a com...
second embodiment
[0045]FIG. 3 is a cross-sectional view of a package structure 3 having a MEMS element according to a second embodiment of the present invention. The package structure 3 of FIG. 3 is similar to the package structure 2 of FIG. 2F, but the main difference therebetween is that the metal layer 211 of the package structure 3 is composed of a plurality of bonding pads, and the metallic traces 24 electrically connect to the first sub-bonding wires 221 and the second sub-bonding wires 222, respectively.
third embodiment
[0046]FIG. 4 is a cross-sectional view of a package structure 4 having a MEMS element according to a third embodiment of the present invention. The package structure 4 in the third embodiment is similar to the package structure 2 of FIG. 2F, but a main difference therebetween is that the top surface of the encapsulant 23 of the package structure 4 is flush with the top surface of the lid 21, i.e., the metal layer 211 is exposed from the encapsulant 23, and the second sub-bonding wires 222 are removed at the time a portion of the encapsulant 23 is removed. As such, the first sub-bonding wires 221 are remained for electrically connecting to the electrical connection pads 201, and the top ends of the first sub-bonding wires 221 are exposed from the top surface of the encapsulant 23.
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