Power module

Abstract

A power module is disclosed. The power module includes a first substrate, a first metal layer, at least one conductive structure and at least one power device. The first metal layer is disposed on the first substrate. The first metal layer has a first thickness d1. The first thickness d1 satisfies: 5 μm≦d1≦50 μm. The conductive structure is disposed at a position different to the first metal layer on the first substrate. The conductive structure has a second thickness d2. The second thickness d2 satisfies: d2≧100 μm. The power device is disposed on the first substrate, the first metal layer or the conductive structure. The driving electrode of the power device is electrically connected to the first metal layer. The power electrode of the power device is electrically coupled to the conductive structure.

Description

RELATED APPLICATIONS[0001]This application claims priority to China Application Serial Number 201310435466.X, filed Sep. 23, 2013, which is herein incorporated by reference.BACKGROUND[0002]1. Technical Field[0003]Embodiments of the present invention relate to a power module. More particularly, embodiments of the present invention relate to a power module for a power converter.[0004]2. Description of Related Art[0005]A semiconductor power device is an indispensable part in a conventional power converter. Power density of a power device corresponds to an output power of the power module per unit volume. For the same output power, the higher the power density, the smaller the power module, so less space is occupied. Therefore, having a high power density has always been an industrial requirement for power modules. To increase the power density of a power device, an integrated power module (IPM) is developed. The IPM integrates a number of semiconductor devices into a package, so high o...

AI Technical Summary

Benefits of technology

The power device described in this patent has a narrower gap between the first metal layer and a driving component, which reduces the size of the device. This allows for a higher layout density per unit area and increases power density. The gap is formed by isotropic etching, which ensures uniformity in the process. Overall, this design improves the performance of the power device.

Problems solved by technology

However the high-temperature sintering process requires high energy consumption and therefore does not meet the trend of energy-saving.

However, as the copper layer gets thicker, the copper layer needs to be eroded deeper for etching.

However, such thickness is difficult to achieve, due to the coefficient of thermal expansion (CTE) of the high-temperature sintering process for DCB substrates.

As a result, the output power of the power module per unit volume is reduced, thereby causing the power density of the power module to drop.

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