Semiconductor structure having finfet ultra thin body and methods of fabrication thereof

Abstract

In one aspect there is set forth herein a semiconductor structure having fins extending upwardly from an ultrathin body (UTB). In one embodiment a multilayer structure can be disposed on a wafer and can be used to pattern voids extending from a UTB layer of the wafer. Selected material can be formed in the voids to define fins extending upward from the UTB layer. In one embodiment silicon (Si) can be grown within the voids to define the fins. In one embodiment, germanium based material can be grown within the voids to define the fins.

Description

TECHNICAL FIELD[0001]The present invention relates to semiconductor devices, and more particular a semiconductor device having a hybrid structure.BACKGROUND[0002]Different semiconductor devices may be fabricated to have one or more different device characteristics, such as switching speed, leakage power consumption, etc. Multiple different designs may each provide optimization of one or more of these characteristics for devices intended to perform specific functions. For instance, one design may increase switching speed for devices providing computational logic functions, and another design may decrease power consumption for devices providing memory storage functions. A system using multiple discrete devices optimized for different functions presents challenges in terms of system complexity, system footprint and cost.[0003]A semiconductor device can be provided by a discrete device, e.g., a field effect transistor (FET), a diode, and resistor. A semiconductor device can be provided ...

AI Technical Summary

Benefits of technology

The patent describes a way to create semiconductor structures with vertical fins, using a very thin layer on a wafer. A layer of material can be put into the voids of this layer to define the fins, which can be made of silicon or germanium. This provides a way to make complex semiconductor structures with precise control over their properties.

Problems solved by technology

A system using multiple discrete devices optimized for different functions presents challenges in terms of system complexity, system footprint and cost.

Optimization challenges are pronounced with continued miniaturization of semiconductor devices.

With short channel effects present, FET performance can be rendered more difficult to control.

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