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Polycrystalline diamond and manufacturing method thereof, scribe tool, scribing wheel, dresser, rotating tool, orifice for water jet, wiredrawing die, cutting tool, and electron emission source

a technology of polycrystalline diamond and manufacturing method, which is applied in the direction of transportation and packaging, pressurized chemical process, cutting tools, etc., can solve the problems of difficult to achieve high-temperature and high-pressure synthesis of n-type diamond doping with a donor, and achieve excellent resistance to oxidation

Inactive Publication Date: 2016-09-15
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a new type of polycrystalline diamond and a method for manufacturing it. The new polycrystalline diamond has the unique characteristic of having dispersed elements of different types in its carbon structure. This allows for the addition of elements such as oxygen, nitrogen, sulfur, or phosphorus to diamond in a uniform and unprecedented level. The new polycrystalline diamond also has excellent resistance to oxidation, making it useful in various applications such as cutting tools, machining tools, and water jet tools. The method for manufacturing the new polycrystalline diamond involves subjecting graphite with added elements to heat treatment in a vacuum chamber to convert it to polycrystalline diamond.

Problems solved by technology

Though electrons can be emitted from n-type diamond in particular, it has been impossible to obtain n-type diamond doped with a donor at a high concentration through high-temperature and high-pressure synthesis.
With this method, however, it is extremely difficult to achieve doping at a high concentration or to introduce a dopant other than phosphorus.

Method used

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  • Polycrystalline diamond and manufacturing method thereof, scribe tool, scribing wheel, dresser, rotating tool, orifice for water jet, wiredrawing die, cutting tool, and electron emission source
  • Polycrystalline diamond and manufacturing method thereof, scribe tool, scribing wheel, dresser, rotating tool, orifice for water jet, wiredrawing die, cutting tool, and electron emission source
  • Polycrystalline diamond and manufacturing method thereof, scribe tool, scribing wheel, dresser, rotating tool, orifice for water jet, wiredrawing die, cutting tool, and electron emission source

Examples

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Effect test

example 1

[0078]A methane gas and methyl amine were mixed at 1:1 in the vacuum chamber, and the gas mixture above was blown onto a diamond base material heated to 1900° C. Here, a degree of vacuum within the vacuum chamber was set to 20 to 30 Torr. Then, graphite containing nitrogen deposited on a substrate. Bulk density of this graphite was 2.0 g / cm3.

[0079]Graphite above was converted to diamond at a synthesis temperature of 2300° C. and at 15 GPa, to thereby obtain nano polycrystalline diamond to which nitrogen was added. The polycrystalline diamond had a crystal grain size from 10 to 200 nm. When this polycrystalline diamond was irradiated with electron beams and annealed at a high temperature of 800° C., red nano polycrystalline diamond was obtained.

example 2

[0080]A methane gas and trimethyl amine were mixed at 1:1 in the vacuum chamber, and the gas mixture above was blown onto a diamond base material heated to 1900° C. Here, a degree of vacuum within the vacuum chamber was set to 20 to 30 Torr. Then, graphite containing nitrogen deposited on a substrate. Bulk density of this graphite was 2.0 g / cm3. As a result of ICP element analysis, a concentration of nitrogen in graphite was 100 ppm.

[0081]Graphite above was converted to diamond at a synthesis temperature of 2300° C. and at 15 GPa, to thereby obtain nano polycrystalline diamond to which nitrogen was added. The polycrystalline diamond had a crystal grain size from 10 to 200 nm. When this polycrystalline diamond was irradiated with electron beams and annealed at a high temperature of 800° C., light red nano polycrystalline diamond was obtained.

example 3

[0082]A methane gas and methyl amine were mixed at 1:1 in the vacuum chamber, and the gas mixture above was blown onto a diamond base material heated to 1900° C. Here, a degree of vacuum within the vacuum chamber was set to 100 Torr. Then, graphite containing nitrogen deposited on a substrate. Bulk density of this graphite was 2.0 g / cm3. As a result of ICP element analysis, a concentration of nitrogen in graphite was 100 ppm.

[0083]Graphite above was converted to diamond at a synthesis temperature of 2300° C. and at 15 GPa, to thereby obtain nano polycrystalline diamond to which nitrogen was added. The polycrystalline diamond had a crystal grain size from 10 to 200 nm. When this polycrystalline diamond was irradiated with electron beams and annealed at a high temperature of 800° C., red nano polycrystalline diamond was obtained.

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Abstract

Nano polycrystalline diamond is composed of carbon, an element of different type which is an element other than carbon and is added to be dispersed in carbon at an atomic level, and an inevitable impurity. The polycrystalline diamond has a crystal grain size not greater than 500 nm. The polycrystalline diamond can be fabricated by subjecting graphite in which the element of different type which is an element other than carbon has been added to be dispersed in carbon at an atomic level to heat treatment within high-pressure press equipment.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Divisional of U.S. patent application Ser. No. 14 / 235,763, filed Jan. 28, 2014, which is a 371 application of International Application No. PCT / JP2012 / 068932, filed Jul. 26, 2012, which claims the benefit of Japanese Patent Application Nos. 2011-165747, 2011-165748 and 2011-165749, filed Jul. 28, 2011.TECHNICAL FIELD[0002]The present invention relates to polycrystalline diamond and a manufacturing method thereof, a scribe tool, a scribing wheel, a dresser, a rotating tool, an orifice for water jet, a wiredrawing die, a cutting tool, and an electron emission source, and particularly to diamond having crystal grains of a nano size, to which an element other than carbon has uniformly been added (hereinafter referred to as “different-type-element-added nano polycrystalline diamond”), group-III-element-added nano polycrystalline diamond, group-V-element-added nano polycrystalline diamond, and a method of manufacturing the...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C01B31/06
CPCC01B31/06B01J3/062B01J2203/061B01J2203/0655C01B32/25C01B32/26Y10T428/2982C04B35/52C04B2235/42C04B2235/427
Inventor IKEDA, KAZUHIROARIMOTO, KEIKOYAMAMOTO, KATSUKOSUMIYA, HITOSHISATO, TAKESHI
Owner SUMITOMO ELECTRIC IND LTD