Page buffer and memory device having the same

Abstract

There are provided a page buffer and a memory device having the same. A page buffer includes a reference current generation unit for precharging a bit line by generating a reference current, a current sensing unit for changing or maintaining a voltage of a select node, based on a change in current of the bit line, a first data sensing unit for storing first data, based on a change in the voltage of the select node, and a second data sensing unit for, when the first data is stored in the first data sensing unit, consecutively storing second data, based on the change in the voltage of the select node.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims a priority to a Korean patent application number 10-2015-0176172 filed on Dec. 10, 2015, which is incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]An aspect of the present disclosure relates to a page buffer and a memory device having the same and, more particularly, to a page buffer and a memory device having the same, which can reduce a sensing time in a read operation or a verify operation of the memory device.[0004]2. Description of the Related Art[0005]A memory system includes a memory device for storing data and a memory controller for controlling the memory device.[0006]The memory controller controls the overall operations of the memory device, and also all command and data exchanges between a host and the memory device.[0007]The host may communicate with the memory system by using an interface protocol, such as a peripheral component interconnect express (PCI-E), an advan...

AI Technical Summary

Benefits of technology

The solution effectively reduces sensing time in memory operations, enhancing the reliability of memory systems by managing current spikes and improving data storage efficiency.

Problems solved by technology

However, when multiple operations requiring a large amount of current are simultaneously performed in a plurality of storage devices, the overall current consumption of the memory system may increase substantially at a rapid pace.

Such spikes of current consumption may lead to an erroneous operation of the memory device due to a temporary current shortage.

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