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Semiconductor Component with a Multi-Layered Nucleation Body

a multi-layered, semiconductor technology, applied in semiconductor devices, lasers, semiconductor lasers, etc., can solve the problems of large wafer bow induced by high density crystal dislocation, significant challenges in silicon substrate fabrication of group iii-v devices,

Active Publication Date: 2017-08-10
INFINEON TECH AMERICAS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent is about a semiconductor component that has multiple layers of nucleation. The technical effect of this design is to improve the efficiency and reliability of semiconductor components by enhancing their ability to withstand high temperatures and other environmental stresses.

Problems solved by technology

However, the use of silicon substrates for the fabrication of group III-V devices presents considerable challenges.
For example, lattice mismatch and differences in the thermal expansion coefficients between group III-V semiconductors and silicon can undesirably result in high density crystal dislocations and large wafer bow induced by group III-V film stress.

Method used

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  • Semiconductor Component with a Multi-Layered Nucleation Body
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  • Semiconductor Component with a Multi-Layered Nucleation Body

Examples

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Embodiment Construction

[0015]The following description contains specific information pertaining to implementations in the present disclosure. One skilled in the art will recognize that the present disclosure may be implemented in a manner different from that specifically discussed herein. The drawings in the present application and their accompanying detailed description are directed to merely exemplary implementations. Unless noted otherwise, like or corresponding elements among the figures may be indicated by like or corresponding reference numerals. Moreover, the drawings and illustrations in the present application are generally not to scale, and are not intended to correspond to actual to relative dimensions.

[0016]As stated above, group III-V semiconductors, such as gallium nitride (GaN) and other III-Nitride materials are important and desirable for the fabrication of optoelectronic and power switching devices. As further stated above, due to disadvantages associated with conventional native III-Nit...

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Abstract

There are disclosed herein various implementations of a semiconductor component with a multi-layered nucleation body and method for its fabrication. The semiconductor component includes a substrate, a nucleation body situated over the substrate, and a group III-V semiconductor device situated over the nucleation body. The nucleation body includes a bottom layer formed at a low growth temperature, and a top layer formed at a high growth temperature. The nucleation body also includes an intermediate layer that is formed substantially continuously using a varying intermediate growth temperature.

Description

BACKGROUND[0001]I. Definition[0002]As used herein, “III-Nitride” or “III-N” refers to a compound semiconductor that includes nitrogen and at least one group III element such as aluminum (Al), gallium (Ga), indium (In), and boron (B), and including but not limited to any of its alloys, such as aluminum gallium nitride (AlxGa(1-x)N), indium gallium nitride (InyGa(1-y)N), aluminum indium gallium nitride (AlxInyGa(1-x-y)N), gallium arsenide phosphide nitride (GaAsaPbN(1-a-b)), aluminum indium gallium arsenide phosphide nitride (AlxInyGa(1-x- y)AsaPbN(1-a-b)), for example. III-N also refers generally to any polarity including but not limited to Ga-polar, N-polar, semi-polar, or non-polar crystal orientations. A III-N material may also include either the Wurtzitic, Zincblende, or mixed polytypes, and may include single-crystal, monocrystalline, polycrystalline, or amorphous structures. Gallium nitride or GaN, as used herein, refers to a III-N compound semiconductor wherein the group III e...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/205H01L29/778H01L31/109H01L31/0304H01L21/02H01L33/00H01L33/12H01L33/32H01S5/323H01L29/20H01L31/18
CPCH01L29/205H01L29/2003H01L29/778H01L31/109H01L31/03044H01L31/1856H01L21/0254H01L33/12H01L33/32H01L33/0025H01S5/32341H01L21/02458H01L33/0075H01L29/7786H01L33/007
Inventor WAN, JIANWEINELSON, SCOTTKANNAN, SRINIVASANKIM, PETER
Owner INFINEON TECH AMERICAS CORP