Unlock instant, AI-driven research and patent intelligence for your innovation.

Implementing dram refresh power optimization during long idle mode

a technology of dram and idle mode, applied in the field of data processing, can solve the problems of dram technology not scaling easily below 40-35 nm going forward, leakage of dram cell capacitor charge, and low dram capacity, cost and energy and power, etc., and achieve the effect of not having negative effects

Inactive Publication Date: 2019-06-20
INT BUSINESS MASCH CORP
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method, system, and memory controller for optimizing the refresh power of a memory subsystem using DRAM during long idle mode. The system monitors the instruction queue and asserts a predefined mode register bit when the queue is empty. In response, the memory controller sends a command to the DRAM to increase the refresh rate and establish a low power mode. This improves system performance by increasing the charge retention capability of DRAM cells at lower core supply. The invention overcomes disadvantages of prior art arrangements and provides a substantial improvement in latency and performance.

Problems solved by technology

Main memory energy and power present a key design challenge.
DRAM technology will not scale easily below 40-35 nm going forward.
Also DRAM capacity, cost, and energy and power are hard to scale.
DRAM cell capacitor charge leaks over time due to temperature, manufacturing issue requiring periodic refresh, for example, every 64 ms to restore lost charge to maintain data.
Performance degradation results with DRAM rank and bank being unavailable while refreshed and predictability impact of long pause during refresh.
During long idle mode, periodic refresh consumes significant energy, thereby impacts overall battery life expectations of portable mobile systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Implementing dram refresh power optimization during long idle mode
  • Implementing dram refresh power optimization during long idle mode
  • Implementing dram refresh power optimization during long idle mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018]In the following detailed description of embodiments of the invention, reference is made to the accompanying drawings, which illustrate example embodiments by which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the invention.

[0019]The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and / or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or gr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method, system and memory controller are provided for implementing refresh power optimization during long idle mode in a memory subsystem utilizing Dynamic Random Access Memory (DRAM). The DRAM includes DRAM cells requiring periodic refresh. A DRAM activity monitoring mechanism monitors an instruction queue and asserts a predefined mode register bit when the instruction queue is empty. Responsive to the asserted predefined mode register bit, a refresh rate is increased and a low power mode is established by reducing DRAM core power level for optimizing refresh power during the long idle mode to provide enhanced system performance.

Description

FIELD OF THE INVENTION[0001]The present invention relates generally to the data processing field, and more particularly, relates to a method, system and memory controller for implementing refresh power optimization during long idle mode in a memory subsystem utilizing Dynamic Random Access Memory (DRAM) to provide enhanced system performance.DESCRIPTION OF THE RELATED ART[0002]Today's need for main memory capacity and bandwidth are increasing with multi-core increasing a number of cores and agents. Data-intensive applications have increased demand for data with consolidation of cloud computing, graphics processing units (GPUs), and mobile devices.[0003]Main memory energy and power present a key design challenge. DRAM consumes power even when not in use from periodic refresh and approximately 40-50% energy spent in off-chip memory hierarchy. DRAM technology will not scale easily below 40-35 nm going forward. Also DRAM capacity, cost, and energy and power are hard to scale.[0004]DRAM ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G11C11/406G06F1/32
CPCG11C11/406G06F1/3275G11C2207/2227G11C2211/4067G11C2211/4065G11C2211/4061G06F13/18Y02D10/00Y02D30/50G11C7/00G06F13/1636
Inventor PARDEIK, MICHAEL D.CORDERO, EDGAR R.RAYCHAUDHURI, ARINDAMCHINNAKKONDA VIDYAPOORNACHARY, DIYANESH B.
Owner INT BUSINESS MASCH CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More