Chemical mechanical polishing composition and method for tungsten

Abstract

A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; a select polyethoxylated tallow amine; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and corrosion of the tungsten is inhibited.

Description

FIELD OF THE INVENTION[0001]The present invention is directed to the field of chemical mechanical polishing of tungsten to at least inhibit corrosion of the tungsten. More specifically, the present invention is directed to a composition and method for chemical mechanical polishing of tungsten to at least inhibit corrosion of the tungsten by providing a substrate containing tungsten; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a select polyethoxylated tallow amine in sufficient amounts to at least inhibit corrosion of the tungsten; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the po...

AI Technical Summary

Benefits of technology

The patent is about chemical mechanical polishing compositions and methods that can polish tungsten while preventing corrosion and reducing dishing.

Problems solved by technology

However, there is a great deal of complexity involved in CMP.

Tungsten is a hard metal and tungsten CMP runs at relatively aggressive settings which poses unique challenges for tungsten CMP.

Unfortunately, many CMP slurries used to polish tungsten, because of their aggressive nature, cause corrosion of the tungsten.

Another problem associated with CMP tungsten is, unfortunately, that many CMP slurries used for polishing tungsten cause the problem of over-polishing and dishing resulting in non-uniform or nonplanar surfaces.

The term “dishing” refers to excessive (unwanted) removal of metal, such as tungsten, from metal interconnect precursors and other features on semiconductors during CMP, thereby causing unwanted cavities in the tungsten.

Dishing is undesirable since, in addition to causing nonplanar surfaces, it negatively affects the electrical performance of the semiconductor.

The severity of the dishing can vary but it typically is severe enough to cause erosion of underlying dielectric materials such as silicon dioxide (TEOS).

The topographical defects which can result from such dishing can further lead to non-uniform removal of additional materials from the substrate surface, such as barrier layer material disposed beneath the conductive material or dielectric material and produce a substrate surface having less than desirable quality which can negatively impact the performance of integrated circuits of the semiconductor.

In addition, as features on the surface of semiconductors become more and more miniaturized, it becomes increasingly difficult to successfully polish the surfaces of the semiconductors.

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