Substrate polishing device and substrate polishing method

Abstract

Provided is a polishing device for appropriately retaining a polishing member in an appropriate state in polishing. The polishing device for partially polishing a substrate includes a polishing member having a processing surface which comes into contact with the substrate and which is smaller than the substrate, a conditioning member for performing conditioning on the polishing member, a first pressing mechanism for pressing the conditioning member against the polishing member in polishing the substrate, and a control unit for controlling an operation of the polishing device. The control unit is configured to control the first pressing mechanism when the substrate is partially polished by the polishing member.

Description

TECHNICAL FIELD[0001]The present invention relates to a device and a method for polishing a substrate.BACKGROUND ART[0002]Recently there has been a processor used for performing various process steps to a processed object (for example, a substrate such as a semiconductor substrate, or various kinds of films formed on the substrate surface). An example of the processor may be a CMP (Chemical Mechanical Polishing) device which performs polishing and the like of the processed object.[0003]The CMP device includes a polishing unit for performing a polishing process to the processed object, a cleaning unit for performing cleaning / drying process to the processed object, and a load / unload unit for delivering the processed object to the polishing unit, and receiving the processed object which has been cleaned and dried by the cleaning unit. The CMP device further includes a carrier mechanism for carrying the processed object among the polishing unit, the cleaning unit, and the load / unload un...

AI Technical Summary

Benefits of technology

The patent describes a polishing device for partially polishing a substrate. The device includes a polishing member with a processing surface that comes into contact with the substrate and is smaller than the substrate. The device also includes a conditioning member for conditioning the polishing member, a first pressing mechanism for pressing the conditioning member against the polishing member, and a control unit for controlling the operation of the polishing device. The device and method described allow for simultaneous conditioning of the polishing member during polishing, which helps to maintain the polishing member in an optimal state for polishing. The technical effect of the invention is to improve the efficiency and consistency of polishing processes by minimizing the clogging of the polishing member and maintaining optimal polishing rates and distribution within the substrate.

Problems solved by technology

Although the optimum conditions have been determined, the polishing and cleaning performances will inevitably change owing to variation in control of the components, and aging of the consumable material.

Those variations may bring about the variation in the residual film and incomplete removal of the step height in or after the CMP, resulting in the residue of the film that ought to be completely removed remaining.

It is difficult to adjust the variations in the circumferential direction of the substrate.

In the above-described circumstance, when correcting the variation in excess of the threshold value, which has occurred in the specific region in the substrate plane, for example, through the reworking, the part requiring no reworking may be unnecessarily polished because of the large contact area.

As a result, it is difficult to correct the part in the threshold region which has been originally required.

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