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Apparatus, system and techniques for mass analyzed ion beam

a technology of ion beam and mass analysis, applied in the field of ion beam apparatus, can solve the problems of large, expensive and heavy, and a significant fraction of the cost and power consumption of a and the limited use of compact ion beam system

Active Publication Date: 2020-09-17
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes an apparatus and system for analyzing ions using an electrodynamic mass analysis device. The device includes an entrance and exit aperture to define a beam axis. The system includes an ion source and an electrodynamic mass analysis device with an upper and lower electrode assembly, and an AC voltage assembly. The system can analyze a continuous ion beam and direct it through the electrodynamic mass analysis device while applying an AC voltage signal to remove impurity ions, resulting in a purified ion beam. The technical effects of this patent include improved accuracy and purity in analyzing ion beams.

Problems solved by technology

Magnets of this kind, however, are large, expensive and heavy and represent a significant fraction of the cost and power consumption of an ion implanter.
In these latter systems, mass analysis may be omitted because of size / space considerations for installing a magnetic analyzer, as discussed above, as well as cost.
Thus, the use of such compact ion beam systems may be limited to applications where purity of implanting species is not a strict requirement.

Method used

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  • Apparatus, system and techniques for mass analyzed ion beam
  • Apparatus, system and techniques for mass analyzed ion beam
  • Apparatus, system and techniques for mass analyzed ion beam

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Embodiment Construction

[0022]An apparatus, system and method in accordance with the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, where embodiments of the system and method are shown. The system and method may be embodied in many different forms and are not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so this disclosure will be thorough and complete, and will fully convey the scope of the system and method to those skilled in the art.

[0023]As used herein, an element or operation recited in the singular and proceeded with the word “a” or “an” are understood as potentially including plural elements or operations as well. Furthermore, references to “one embodiment” of the present disclosure are not intended to be interpreted as precluding the existence of additional embodiments also incorporating the recited features.

[0024]Provided herein are approaches for mass analyzed ion implantati...

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PUM

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Abstract

An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle.

Description

FIELD OF THE DISCLOSURE[0001]The disclosure relates generally to ion beam apparatus and more particularly to ion implanters having mass analysis.BACKGROUND OF THE DISCLOSURE[0002]Ion implantation is a process of introducing dopants or impurities into a substrate via bombardment. Ion implantation systems (“ion implanters”) may comprise an ion source and a substrate stage or process chamber, housing a substrate to be implanted. The ion source may comprise a chamber where ions are generated. Beamline ion implanters may include a series of beam-line components, for example, a mass analyzer, a collimator, and various components to accelerate or decelerate the ion beam.[0003]A useful function of an ion implanter beamline is to separate ions of different masses so that an ion beam may be formed having the desired ions for treating the work piece or substrate, while undesirable ions are intercepted in a beamline component and do not reach the substrate. In known systems, this mass analysis ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01J37/05H01J37/147H01J37/317
CPCH01J2237/057H01J37/1472H01J37/3171H01J37/05
Inventor SINCLAIR, FRANKBILOIU, COSTELOLSON, JOSEPH C.LIKHANSKII, ALEXANDRE
Owner APPLIED MATERIALS INC