Semiconductor device with boron nitride layer and method for fabricating the same
a technology of boron nitride and semiconductor devices, which is applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., can solve the problems of continuous increase, improve the quality of patterning, improve the reliability of the semiconductor device, and improve the quality of the semiconductor devi
Active Publication Date: 2022-02-24
NAN YA TECH
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
The present patent aims to improve the quality of patterning in semiconductor devices by employing a hard mask layer as an anti-reflection coating. This helps to enhance the overall quality of the semiconductor device. Additionally, the isolation layer is formed without any voids due to the presence of covering layers, which improves the reliability of the semiconductor device.
Problems solved by technology
However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing.
Therefore, challenges remain in achieving improved quality, yield, performance, and reliability and reduced complexity.
Method used
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[0036]The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.
[0037]F...
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a pad oxide layer positioned on the substrate, a hard mask layer positioned on the pad oxide layer, an isolation layer positioned along the hard mask layer and the pad oxide layer and extending to the substrate, a first dielectric layer positioned between the substrate and the isolation layer, and a liner layer positioned on a top surface of the hard mask layer and positioned between the first dielectric layer and the isolation layer, between the pad oxide layer and the isolation layer, and between the hard mask layer and the isolation layer. The hard mask layer and the liner layer include boron nitride.
Description
TECHNICAL FIELD[0001]The present disclosure relates to a semiconductor device and a method for fabricating the semiconductor device, and more particularly, to a semiconductor device with the boron nitride layer and a method for fabricating the semiconductor device with the boron nitride layer.DISCUSSION OF THE BACKGROUND[0002]Semiconductor devices are used in a variety of electronic applications, such as personal computers, cellular telephones, digital cameras, and other electronic equipment. The dimensions of semiconductor devices are continuously being scaled down to meet the increasing demand of computing ability. However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing. Therefore, challenges remain in achieving improved quality, yield, performance, and reliability and reduced complexity.[0003]This Discussion of the Background section is provided for background information only. The statements in this Discussion of the Backgr...
Claims
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IPC IPC(8): H01L29/423H01L29/40
CPCH01L29/4236H01L29/401H01L29/0649H01L21/76224H01L21/0276H01L21/02112H01L21/02211H01L21/02222H01L21/02208H01L21/02205H01L21/7621H01L21/823481
Inventor TSAI, TZU-CHING
Owner NAN YA TECH