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Bus interface circuit in a semiconductor memory device

a technology of bus interface circuit and memory device, which is applied in the direction of digital storage, instruments, and increasing the degree of modification of reliability, can solve the problems of power consumption, noise, signal reflection and ringing phenomenon in systems with speeds over 50 mhz, and the limitation of communication at high speed

Inactive Publication Date: 2000-06-20
HYUNDAI ELECTRONICS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the TTL interface causes problems such as power consumption, noise, signal reflection and ringing phenomenon in systems with speeds over 50 MHz.
This is a limitation in communicating at high speed.
However, since the LVTTL interface causes various problems such as power consumption and noise, etc. similar to TTL interface in systems with speeds over 100 MHz, it is difficult to apply it to any system.
But there is limitation in decreasing voltage variation width caused by a poor common mode noise.
Hence, minimum voltage swing can be maintained to a desired margin but it becomes a limitation in improving high speed and low power characteristics of an interface.
Hence, there is a problem in that the EMI is increases in high-speed operation.

Method used

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  • Bus interface circuit in a semiconductor memory device
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  • Bus interface circuit in a semiconductor memory device

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first embodiment

FIG. 2A illustrates a concept diagram of a high-speed bus interface according to the present invention. In FIG. 2A, a bus interface has a data driver 11, a reference voltage driver 21 and a receiver 13. The data driver 11 transmits a data signal through a transmission line 12 that is single terminated. The reference voltage driver 21 transmits a reference voltage signal through a transmission line 22 that is single terminated. The receiver 13 determines logic state by comparing the data signal transmitted through the transmission line 12 with the reference voltage signal transmitted which goes through the transmission line 22.

In the present invention, the reference voltage signal is transmitted to the receiver 13 through a transmission line having identical environment to a transmission line for the data signal, which is different from GTL or RSL interfaces. If the transmission line 12 for the data signal and the transmission line for the reference voltage signal are suitably arrang...

second embodiment

FIG. 4 illustrates a concept diagram of a high-speed bus interface according to the present invention. The high-speed bus interface consists of a transmission line that is parallel terminated where the high-speed bus interface is different from FIG. 2A. The high-speed bus interface has a data driver 31 to transmit a data signal through a transmission line that is parallel terminated, a reference voltage driver 35 to transmit a reference voltage signal to a transmission line that is parallel terminated and a receiver 33 to determine a logic state by comparing a data signal transmitted through the transmission line with the reference voltage signal.

As described above, the reference voltage signal Vref and the data signal are transmitted to the receiver 33 through the transmission line having identical environment. If the transmission line for the data signal and the transmission line for the reference voltage signal are arranged as in FIG. 4, the common mode noise affecting to the tra...

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Abstract

This invention relates to a bus interface circuit in a semiconductor memory device. This invention comprises a data driver to transmit a data signal through a first transmission line of which one end is terminated; a reference voltage driver to transmit a reference voltage signal through a second transmission line of which one end is terminated; and a receiver to determine a logic state by comparing the data signal transmitted by the first transmission line with the reference voltage signal transmitted by the second transmission line. Accordingly, a high-speed bus interface circuit of the present invention can decrease a common mode noise, influence of ground bounce, an output voltage swing and a power consumption by simultaneously driving a data driver and a reference voltage driver in a memory interface using a transmission line being either single or parallel terminated to transmit to a receiver.

Description

This invention relates to a bus interface circuit in a semiconductor memory device. In particular, it relates to a bus interface circuit, which can transfer a data signal and a reference voltage signal to a receiver by simultaneously driving a data driver with a reference voltage driver in a bus interface using a transmission line whether it is a single or parallel terminated.DESCRIPTION OF THE RELATED PRIOR ARTA DRAM, which is used for the main memory and the video memory in a computer, requires a wide bandwidth to improve the performance of a system. To satisfy the condition of the bandwidth, study of the bus interface, through which a data signal is transmitted at high speed, should be considered. A TTL interface has been used for the last twenty years as the industry standard. However, the TTL interface causes problems such as power consumption, noise, signal reflection and ringing phenomenon in systems with speeds over 50 MHz. This is a limitation in communicating at high speed...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G11C7/10
CPCG11C7/1006G11C7/00
Inventor SUH, JUNG WON
Owner HYUNDAI ELECTRONICS IND CO LTD
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