Semiconductor pressure sensor

Abstract

A semiconductor pressure sensor comprises a non-single-crystal-silicon-based substrate, a movable insulating diaphragm, at least one piezoresistor positioned on the insulating diaphragm, an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the non-single-crystal-silicon-based substrate, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the insulating diaphragm and the piezoresistor.

Description

BACKGROUND OF INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a pressure sensor, and more specifically, to a semiconductor pressure sensor capable of avoiding generating leakage currents for meeting market requirements.[0003]2. Description of the Prior Art[0004]Air pressure and hydraulic measurements are important in industrial control. Currently, a pressure sensor in common use includes a piezoresistive pressure sensor, a piezoelectric pressure sensor, a capacitive pressure sensor, a potentiometer pressure sensor, an inductive-bridge pressure sensor, a strain gauge pressure sensor, and a semiconductor pressure sensor.[0005]Additionally, because sizes of various pressure sensors are reduced gradually, a micromachining technology is developed to manufacture various microsensors and microactuators that are integrated with micro electronic circuits to form a microsystem, which is generally called a micro electro-mechanical system (MEMS). The MEMS has an e...

AI Technical Summary

Benefits of technology

"The invention is a semiconductor pressure sensor with a low production cost and reduced leakage currents. It is made on a non-single-crystal-silicon-based substrate, which helps to lower raw materials costs. The piezoresistor is made of polysilicon or other piezoelectric materials, which avoids generating leakage currents and improves detection sensitivity and accuracy. The invention also includes an insulating supporter and a thin film transistor control circuit for improved performance."

Problems solved by technology

However, a cost of silicon wafer is so high that it costs a lot to form the conventional semiconductor pressure sensor 10.

As a result, it is an important issue to manufacture a semiconductor pressure sensor with a low production cost and a high quality.

Nevertheless, leakage currents are usually generated near the p-n junction, thus disturbing an operation of the sensor.

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