Semiconductor device with staggered electrodes and increased wiring width
a technology of semiconductor devices and electrodes, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of grand terminals and inability to use pads for terminals for large amounts of electric curren
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first embodiment
First, the first embodiment will be described in reference to FIGS. 1 and 2. It is to be noted that FIG. 1 is a top plan view of the semiconductor device of this embodiment.
[0023]First, as shown in FIG. 1, an outside-line electrode 103, a central-line electrode 105 and an inside-line electrode 106 of a semiconductor pellet 101 have a staggered arrangement in three lines on the peripheral part 102 of a semiconductor pellet 101. The outside-line electrode is formed in a square shape or a rectangle shape in which the ratio of the sides is from 1 to 2. The central-line electrode configures a hexagonal electrode having a hypotenuse formed to cut two corners at predetermined degrees on the inside-line electrode side of the rough square shaped electrode. The inside-line electrode configures a hexagonal electrode having a hypotenuse formed to cut the two corners at predetermined degrees on the central-line electrode side of the rough square shaped electrode.
[0024]In addition, between the ce...
second embodiment
[0042]In the embodiment described above, a hexagonal electrode having a hypotenuse formed to cut the two corners facing each other of a basic rough square shaped electrode is introduced as a central electrode and an inside-line electrode. In this embodiment, an octagonal electrode having a hypotenuse formed to cut all of the four corners of a basic rough square shaped electrode is introduced as a central electrode and an inside-line electrode.
[0043]Next, the second embodiment will be described in reference to FIGS. 3 and 4. It is to be noted that FIG. 3 is a top plan view of the semiconductor device of the present invention.
[0044]First, as shown in FIG. 3, an outside-line electrode 203, a central-line electrode 205 and an inside-line electrode 206 of a semiconductor pellet 201 have a staggered arrangement in three lines on the peripheral part 202 of a semiconductor pellet 201. The outside-line electrode is formed in a square shape or a rectangle shape in which the ratio of the sides...
third embodiment
[0062]In the embodiment described above, the explanation is provided with regard to the configuration that a hexagonal or an octagonal electrode is introduced as a central electrode and an inside-line electrode. In this embodiment, an electrode with a two-layer structure configuring an octagonal lower electrode on the lower layer and a square upper electrode on the upper layer is introduced as a central electrode and an inside-line electrode.
[0063]Next, the third embodiment will be described in reference to the FIGS. 5, 6 and 7. It is to be noted that FIG. 5 is a top plan view of the semiconductor device of the present invention.
[0064]First, as shown in FIG. 5, an outside-line electrode 303, a central-line electrode 305 and an inside-line electrode 306 of a semiconductor pellet 301 have a staggered arrangement in three lines on the peripheral part 302 of a semiconductor pellet 301. The outside-line electrode is formed in a square shape or a rectangle shape in which the ratio of the ...
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