Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pulse thermal processing of functional materials using directed plasma arc

a technology of plasma arc and functional materials, which is applied in the direction of arc welding apparatus, plasma welding apparatus, electrical heating fuel, etc., can solve the problems of low melting point, temperature-sensitive substrates, low melting point,

Active Publication Date: 2007-05-22
UT BATTELLE LLC
View PDF13 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0012]Accordingly, objects of the present invention include: provision of processes for rapid thermal processing of functional materials, especially on temperature-sensitive substrates, including large area processing, shorter processing times, minimization of grain growth of thin films, and minimization of sintering of nanoparticles.
[0015]In accordance with another aspect of the present invention, a method of thermally processing a functional material on a temperature-sensitive substrate includes exposing the functional material to at least two pulses of infrared light emitted from a directed plasma arc to thermally process said functional material, the two pulses each having a duration of no more than 10 s and a periodicity of no more than 60 s so that the temperature-sensitive substrate is not deleteriously affected by the infrared light.

Problems solved by technology

In many cases, substrates that would fulfill such criterion are temperature-sensitive and are not able to withstand the processing environment of a conventional furnace.
Such temperature-sensitive substrates—for example, low melting point, light-weight metals and flexible polymers, cannot withstand the high temperatures necessary for processing the thin-film.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pulse thermal processing of functional materials using directed plasma arc
  • Pulse thermal processing of functional materials using directed plasma arc

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018]Pulsed energy from a directed, high density infrared plasma arc lamp, referred to hereinafter by the term “directed plasma arc” (DPA) is the basic tool used in the present invention. A suitable device that produces the necessary DPA is described in U.S. Pat. No. 4,937,490 (referenced above). The DPA can supply large power densities, up to 20,000 W / cm2, for example, depending on the setup, simultaneously over large areas, for example, 300 cm2, in short time frames in a completely controlled manner. The device is highly adaptable to meet the needs of many different applications.

[0019]The heating process utilizing the pulsed DPA is capable of quickly delivering large amounts of heat over large surface areas with little or no deleterious influence upon subsurface compositions. Pulses of IR energy from the DPA can be of as short in duration and / or periodicity as the physical limitations of the device that produces the DPA, preferably in a manner that allows precise control various ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
temperatureaaaaaaaaaa
areaaaaaaaaaaa
Login to View More

Abstract

A method of thermally processing a material includes exposing the material to at least one pulse of infrared light emitted from a directed plasma arc to thermally process the material, the pulse having a duration of no more than 10 s.

Description

[0001]The United States Government has rights in this invention pursuant to contract no. DE-AC05-00OR22725 between the United States Department of Energy and UT-Battelle, LLC.FIELD OF THE INVENTION[0002]The present invention relates to methods of rapidly processing functional materials, and more particularly to rapidly processing functional layers on temperature-sensitive substrates by exposure to pulsed infrared radiation emitted from a directed plasma arc (DPA).BACKGROUND OF THE INVENTION[0003]Known methods of thermally processing (annealing and sintering, for example) functional materials must generally be performed at elevated temperatures and take several hours, thus a substrate that supports a functional material must be capable of withstanding the requisite processing environment. In order to advance the technology of thin-film and nanoparticle devices, more attractive substrates that are light-weight and flexible must be considered. In many cases, substrates that would fulfi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): B23K10/00
CPCB05D3/148B82Y30/00C23C2/26C23C4/18C23C26/00H01L21/324H01L31/0322H01L31/1864G11B5/84Y02E10/541Y02P70/50
Inventor OTT, RONALD D.BLUE, CRAIG A.DUDNEY, NANCY J.HARPER, DAVID C.
Owner UT BATTELLE LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com