Substrate polishing apparatus, substrate polishing method, and apparatus for regulating temperature of polishing surface of polishing pad used in polishing apparatus

Abstract

An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a surface of a substrate, such as a semiconductor substrate, by holding the substrate with a substrate holding mechanism, pressing the substrate against a polishing surface of a polishing pad on a polishing table, and causing relative movement between the surface of the substrate and the polishing surface of the polishing pad. The present invention also relates to an apparatus for regulating a temperature of the polishing surface of the polishing pad used in the substrate polishing apparatus.[0003]2. Description of the Related Art[0004]A chemical mechanical polishing (CMP) apparatus has been known as an apparatus for polishing a surface of a substrate, such as semiconductor substrate. Typically, this apparatus has a polishing table, a polishing pad attached to an upper surface of the polishing table, and a sub...

AI Technical Summary

Benefits of technology

The present invention provides a substrate polishing apparatus with a temperature-regulating function for the polishing pad, which can keep the pad surface temperature constant during the entire polishing time or each part of the polishing time, to achieve an optimal polishing rate and surface property. This prevents deterioration of slurry and achieves uniform polishing of the substrate. The apparatus includes a contact surface with a mirror-finished or chemical vapor deposition (CVD) coating to reduce surface roughness. Additionally, a raising mechanism can be used to raise the solid member up to an upright position without interfering with replacing the polishing pad. The temperature control is achieved through a selected PID parameter based on the pad temperature information, which optimizes the polishing rate and keeps the polishing time constant, resulting in improved productivity and reduced costs. The polishing uniformity and step property in the surface of the substrate are improved, leading to a higher yield of products.

Problems solved by technology

However, a polishing rate of the substrate surface is affected not only by the contact pressure on the polishing surface, but also by a temperature of the polishing surface, a concentration of the slurry supplied, and the like.

Therefore, it is not possible to completely control the polishing rate only by regulating the contact pressure on the polishing surface.

As a result, a uniform polishing profile cannot be obtained.

Generally, the temperature of the polishing surface of the polishing pad is not uniform because of heat generation of the polishing surface itself due to contact with the surface of the substrate and due to contact with a retainer ring of the top ring provided for retaining the substrate, a variation in heat absorptivity of the polishing surface, flow behavior of the slurry supplied onto the polishing surface, and the like.

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