Plasma processing apparatus and plasma generation antenna
a processing apparatus and plasma technology, applied in the direction of plasma technique, chemical vapor deposition coating, coating, etc., can solve the problems of difficult to perform a plasma process capable of satisfying the requirement for further miniaturization of semiconductor devices, high electron temperature of generated plasma, and limited plasma density in the region having high plasma density, etc., to achieve the effect of effectively supplying gas and electromagnetic waves
Active Publication Date: 2017-01-10
TOKYO ELECTRON LTD
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Benefits of technology
The patent describes an antenna and a device for processing plasma that can effectively supply gas and electricity. This technology helps to generate plasma and utilize it for various applications.
Problems solved by technology
In a capacitively coupled plasma processing apparatus and an inductively coupled plasma processing apparatus, however, electron temperature of generated plasma is high and a region having high plasma density is limited.
For these reasons, it has been difficult to perform a plasma process capable of satisfying the requirement for further miniaturization of the semiconductor devices.
Since the gas is supplied from an outside of the ceiling plate, a gas flow may not be controlled, which makes it difficult to control the plasma effectively.
Method used
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modification example
[0081]A modification example of the second illustrative embodiment in which the shower head 210 is made of silicon will be described. In this case, a silicon surface of the shower head 210 is exposed, as illustrated in FIG. 7, without being thermally sprayed or covered with a ceiling plate 700.
[0082]In the second illustrative embodiment and the modification example thereof, it is also possible to supply microwave to the shower head 210 while applying a DC voltage thereto. With this configuration, the plasma processing apparatus 10 can be applied to various processes. For example, once the microwave is supplied to the shower head 210, a surface wave propagates on the surface of the shower head 210. At this time, a sheath region is formed on the surface of the shower head 210, and the surface wave propagates on the sheath. The DC voltage controls a thickness of the sheath. For example, the sheath can be controlled to be thick by applying the DC voltage to the shower head 210. As a res...
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Abstract
A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.
Description
CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Japanese Patent Application Nos. 2011-078029 and 2012-072759 filed on Mar. 31, 2011 and Mar. 28, 2012, respectively, and U.S. Provisional Application No. 61 / 537,742 filed on Sep. 22, 2011, the entire disclosures of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present disclosure relates to a plasma processing apparatus and a plasma generation antenna. More particularly, the present disclosure relates to a structure of a plasma generation antenna and a plasma processing apparatus using the antenna.BACKGROUND OF THE INVENTION[0003]A plasma process is an essential technique for manufacturing a semiconductor device. To meet a recent requirement for high integration and high speed of LSI, semiconductor devices forming the LSI are required to be further miniaturized.[0004]In a capacitively coupled plasma processing apparatus and an inductively coupled plasma processing apparatus...
Claims
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IPC IPC(8): C23C16/00H01L21/306H01J37/32C23C16/455C23F1/00H05H1/46C23C16/511
CPCH01J37/3222C23C16/45565C23C16/511H01J37/3244H01J37/32211H01J37/32229H01J37/32449H05H1/46H05H2001/463H05H1/463
Inventor IKEDA, TAROKOMATSU, TOMOHITOKASAI, SHIGERU
Owner TOKYO ELECTRON LTD