Semiconductor photosensitive unit and semiconductor photosensitive unit array thereof

Abstract

The present invention relates to a semiconductor photosensitive unit and a semiconductor photosensitive unit array thereof, including a floating gate transistor, a gating MOS transistor and a photodiode that are disposed on a semiconductor substrate. An anode or a cathode of the photodiode is connected to a floating gate of the floating gate transistor through the gating MOS transistor, and the corresponding cathode or anode of the photodiode is connected to a drain of the floating gate transistor or connected to an external electrode. After the gating MOS transistor is switched on, the floating gate is charged or discharged through the photodiode; and after the gating MOS transistor is switched off, charges are stored in the floating gate of the floating gate transistor. Advantages like a small unit area, low surface noise, long charge storage time of the floating gate, and large dynamic range of an operating voltage are achieved.

Description

RELATED APPLICATIONS[0001]This application is the U.S. National Phase application under 35 U.S.C. §371 of International Patent Application No. PCT / CN2015 / 076030, filed Apr. 8, 2015, entitled “SEMICONDUCTOR LIGHT SENSITIVE CELL AND SEMICONDUCTOR LIGHT SENSITIVE CELL ARRAY,” which claims priority to Chinese Patent Application No. 201410140574.9, filed Apr. 9, 2014, which are hereby expressly incorporated by reference in their entirety for all purposes.BACKGROUND OF THE INVENTION[0002]Field of the Invention[0003]The present invention relates to a CMOS image sensor, and more particularly to a semiconductor photosensitive unit and a semiconductor photosensitive unit array thereof.[0004]Description of Related Art[0005]The existing image sensors are mainly divided into two types: charge-coupled device image sensors and CMOS image sensors. The charge-coupled device image sensors have advantages such as high image quality and low noise, but have high production cost and are difficult to be i...

AI Technical Summary

Benefits of technology

[0027]The present invention has significant advantages as compared with the prior art in that:

[0029]2. when the semiconductor photosensitive unit of the present invention reads data, because the gating MOS transistor is in a switch-off state, the influence to the floating gate by the voltages applied on the photodiode and the first control gate can be reduced, and a dynamic range of an operating voltage can be increased;

[0029]2. when the semiconductor photosensitive unit of the present invention reads data, because the gating MOS transistor is in a switch-off state, the influence to the floating gate by the voltages applied on the photodiode and the first control gate can be reduced, and a dynamic range of an operating voltage can be increased;

[0030]3. the semiconductor photosensitive unit of the present invention has a small unit area and low surface noise, and improves the working reliability of the semiconductor photosensitive unit array of the present invention.

Problems solved by technology

The charge-coupled device image sensors have advantages such as high image quality and low noise, but have high production cost and are difficult to be integrated with a peripheral circuit.

The defect of the CMOS image sensor is that, the four independently working MOS transistors occupy a large substrate area in the single pixel unit of the CMOS image sensor, the product pixel is low, and the product resolution is not high.

However, to guarantee the performance of the semiconductor photosensitive device, the planar-channel semiconductor photosensitive device also requires a long current channel, which increases the area of the semiconductor photosensitive device to some extent and reduces the chip density.

However, the above two structures of semiconductor photosensitive devices that charge or discharge a floating gate by using a photosensitive pn junction diode have a common problem: a photosensitive region of the photosensitive pn junction diode requires a large area, and the floating gate is directly connected to the photosensitive region of the photosensitive pn junction diode, so that after being charged into the floating gate, the photosensitive current is easily leaked to the photosensitive region of the photosensitive pn junction diode, which directly affects the working reliability of the image sensor device.

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