Copper-based metal polishing solution and method for manufacturing semiconductor device
a technology of metal polishing solution and semiconductor device, which is applied in the direction of polishing compositions, semiconductor/solid-state device testing/measurement, instruments, etc., can solve the problem of low flatness
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example 1
First, as in FIG. 8A, a 1000 nm thick SiO.sub.2 film 22 as an insulating interlayer was deposited by a CVD process on a silicon substrate 21 on the surface of which diffusion layers such as a source and a drain (not shown) were formed. Thereafter, a plurality of trenches 23, 500 nm in depth, having a shape corresponding to an interconnecting layer were formed in the SiO.sub.2 film 22 by photoetching. As shown in FIG. 8B, a 15 nm thick TiN barrier layer 24 and a 600 nm thick Cu film 25 were deposited in this order by sputter vapor deposition on the SiO.sub.2 film 22 including the trenches 23.
Subsequently, the substrate 21, FIG. 8B, was held upside down by the substrate holder 5 of the polishing apparatus discussed earlier with reference to FIG. 1. A load of 300 g / cm.sup.2 was applied from the support shaft 4 of the holder 5 to the substrate toward the polishing pad 2 which was covered on the turntable 1 and consisted of SUBA800 (tradename) manufactured by Rodel Nitta Corp. While the ...
example 2
First, as in FIG. 13A, an 800 nm thick SiO.sub.2 film 22 and a 200 nm thick Si.sub.3 N.sub.4 film 27 were deposited in this order to form an insulating interlayer by a CVD process on a silicon substrate 21 on the surface of which diffusion layers such as a source and a drain (not shown) were formed. Thereafter, a plurality of trenches 23, 500 nm in depth, having a shape corresponding to an interconnecting layer were formed in the Si.sub.3 N.sub.4 film 27 and the SiO.sub.2 film 22 by photoetching. As shown in FIG. 13B, a 15 nm thick TiN barrier layer 24 and a 600-nm thick Cu film 25 were deposited in this order by sputter vapor deposition on the Si.sub.3 N.sub.4 film 27 including the trenches 23.
Subsequently, the substrate 21, FIG. 13B, was held upside down by the substrate holder 5 of the polishing apparatus discussed earlier with reference to FIG. 1. A load of 300 g / cm.sup.2 was applied from the support shaft 4 of the holder 5 to the substrate toward the polishing pad 2 which was c...
example 3
First, as in FIG. 14A, a 1000 nm thick Si.sub.3 N.sub.4 film 27 as an insulating interlayer was deposited by a CVD process on a silicon substrate 21 on the surface of which diffusion layers such as a source and a drain (not shown) were formed. Thereafter, a plurality of trenches 23, 500 nm in depth, having a shape corresponding to an interconnecting layer were formed in the Si.sub.3 N.sub.4 film 27 by photoetching. As shown in FIG. 14B, a 600 nm thick Cu film 25 was deposited on the Si.sub.3 N.sub.4 film 27 including the trenches 23 by sputter vapor deposition.
Subsequently, the substrate 21, FIG. 14B, was held upside down by the substrate holder 5 of the polishing apparatus discussed earlier with reference to FIG. 1. A load of 400 g / cm.sup.2 was applied from the support shaft 4 of the holder 5 to the substrate toward the polishing pad 2 which was covered on the turntable 1 and consisted of SUBA800 (tradename) manufactured by Rodel Nitta Corp. While the turntable 1 and the holder 5 w...
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Abstract
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