Heat glass modelling thermal pressure transfering plate
A molding and glass technology, applied in the field of heat transfer plates for glass molding, can solve problems such as process variation, precision deviation of molded glass, and increase in defective rate.
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Embodiment 1
[0060] Use coefficient of thermal expansion at 4×10 -6 / K~9×10 -6 / K cemented tungsten carbide super hard alloy is used as the substrate 402, and the working surface 402a of the substrate 402 is ground and polished to make the surface roughness Ra value not greater than 5nm.
[0061] Next, a TiAl alloy film is used as the intermediate layer 403, which is formed on the working surface 402a of the substrate 402. After the ground and polished substrate 402 is cleaned, it is placed in the above-mentioned coating reaction chamber, using a TiAl alloy target with a ratio of Ti to Al of 50 / 50atom%, at a temperature of 250-450°C, and an RF sputtering power of 500W Bottom, the substrate bias voltage is 120V, and argon gas is introduced to reach 2×10 -1 At the working pressure of Pa, a TiAl alloy film with a thickness of about 80 nm is deposited on the working surface 402a of the substrate 402 as the intermediate layer 403.
[0062] Finally, a TiAlN ternary alloy film is used as the protecti...
Embodiment 2
[0065] Use coefficient of thermal expansion at 4×10 -6 / K~9×10 -6 / K cemented tungsten carbide super hard alloy is used as the substrate 502, and the working surface 502a of the substrate 502 is ground and polished to make the surface roughness Ra value not greater than 5nm.
[0066] Next, a TiAl alloy film is used as the first intermediate layer 503, which is formed on the working surface 502a of the substrate 502. After the ground and polished substrate 502 is cleaned, it is placed in the above-mentioned coating reaction chamber, using a TiAl alloy target with a ratio of Ti to Al of 50 / 50atom%, at a temperature of 250-450℃, and an RF sputtering power of 500W Bottom, the substrate bias voltage is 120V, and argon gas is introduced to reach 2×10 -1 At the working pressure of Pa, a TiAl alloy film with a thickness of about 80 nm is deposited on the working surface 502a of the substrate 502 as the first intermediate layer 503.
[0067] Next, a TiAlN ternary alloy film is used as the ...
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Abstract
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