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Process for preparing uni-dimensional zinc oxide nano-materials

A Nanomaterial, Zinc Oxide Technology

Inactive Publication Date: 2008-03-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

However, the conditions used in these methods are harsh, the equipment is expensive, and the operation is complicated.

Method used

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  • Process for preparing uni-dimensional zinc oxide nano-materials

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Embodiment

[0026] The following is an example of preparing zinc oxide one-dimensional nanomaterials by the method of the present invention.

[0027] The inorganic zinc salt used includes zinc chloride, zinc nitrate, zinc acetate, etc., and the concentration of the inorganic zinc salt and sodium sulfide solution is controlled at 0.05-0.1 mol / l.

[0028] Weigh 0.9g of analytically pure zinc acetate and place it in a binary solution of water / methanol, and stir to form a homogeneous solution. Weigh 0.4g of analytically pure sodium sulfide and place it in another binary solution of water / methanol, and stir to form a homogeneous solution. The sodium sulfide solution was added dropwise to the zinc acetate solution to form a white zinc sulfide precipitate. The precipitate was washed with deionized water and methanol, respectively, and then dried in an oven at 50 °C. Put the dried zinc sulfide into a box furnace, heat it at 700°C in an air atmosphere for 1 hour, and then cool it down to room te...

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Abstract

A method of preparing zinc oxide in one-dimensional nano material, the characters of which includes as follows: (1) adding the same mole inorganic zincates and sodium sulfide to dibasic solution of water / alcohol to form homogenous solution by agitating; (2) adding sodium sulfide solution in droplet to inorganic zincates solution to react and form zinc sulfide deposit with agitation; (3) washing and drying the deposit by deionized water and organic alcohol; (4) oxygenizing the zinc sulfide after drying to get zinc oxide in one-dimensional nano material.

Description

technical field [0001] The invention relates to a preparation method of a nanometer material, in particular to a method for preparing a zinc oxide one-dimensional nanometer material by oxidizing a precursor zinc sulfide. Background technique [0002] ZnO is an important II-VI wide bandgap and direct bandgap semiconductor material, with a bandgap width of 3.37eV at room temperature and an exciton binding energy of 60meV. It is considered to be another new optoelectronic material after ZnSe and GaN. , can be used in short-wavelength lasers, ultraviolet detectors, light-emitting diodes, solar cells, field-effect transistors, chemical sensors and other fields. [0003] One-dimensional nanomaterials refer to material systems in which carriers can move freely in only one direction and are constrained in the other two directions. In recent years, one-dimensional nanomaterials have been one of the more active frontier fields in nanoscience research, mainly because of their peculiar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02
Inventor 彭文琴曲胜春王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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