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Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques

A technology for semiconductors and wafers, applied in the field of post-CMP cleaning of semiconductor wafer surfaces using a combination of water-containing and low-temperature cleaning technologies, which can solve problems such as ineffective effects

Inactive Publication Date: 2008-04-02
RAVE N P
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the removal of these small sub-0.3 μm sized particles formed from post-CMP slurries is still not very effective

Method used

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  • Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques
  • Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques

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Experimental program
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Embodiment Construction

[0026] wet cleaning method

[0027] To remove post-CMP contamination from semiconductor wafers using conventional wet cleaning methods, the wafers were placed in a sink of running water and rinsed with deionized water for up to 1 minute. Subsequently, an aqueous-based cleaning agent is applied to the wafer for about 2 minutes to clean it. After this step, rinse the wafer with deionized water again for about 1 minute in a sink of running water. Subsequently, spin dry in a spin rinse dryer at about 1500 rpm for about 3 minutes.

[0028] Alternatively, cleaning steps using aqueous or solvent-based cleaning agents may be performed with multiple steps of rinsing with deionized water between each step. Solvents include any solvents commonly used in the industry to remove contaminants from wafer surfaces. These solvents include, but are not limited to, SCl (which is a combination of ammonium hydroxide, hydrogen peroxide, and water typically mixed in a ratio ranging from 0.2:1:5 to...

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PUM

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Abstract

The present invention provides a new and improved method for aqueous and low-temperature enhanced (ACE) cleaning suitable for cleaning semiconductor surfaces and surfaces of metals, especially hydrophobic low-K dielectric films and CMP erosion barrier films, to remove post-CMP contaminants . The method is particularly suitable for removing contaminants with a size of 0.3 μm or smaller. The ACE cleaning method is suitable for surfaces that have undergone chemical mechanical polishing (CMP). The method includes the steps of cleaning the surface with an aqueous-based cleaning method, at least partially drying the surface, and shortly thereafter, using CO 2 Low temperature cleaning method to clean the surface. The method is capable of removing said contaminants from surfaces that are hydrophobic and thus difficult to clean with aqueous-based cleaning techniques alone.

Description

field of invention [0001] The present invention relates to the field of cleaning contaminants from post chemical mechanical polishing of semiconductor materials, and more particularly to the removal of contaminants after chemical mechanical polishing of metal and dielectric films using a combination of aqueous-based and low temperature enhanced (ACE) cleaning techniques. technical background [0002] Chemical Mechanical Polishing (CMP) is often used in silicon-based device manufacturing, optical manufacturing, and compound semiconductor device manufacturing processes for overall planarization of metal and dielectric films. The CMP process may involve holding a thin and planar substrate of semiconductor material rotating against a wet polishing disc under controlled pressure and temperature conditions and coated with a chemical called a slurry. The slurry contains particles such as ceria, alumina, or gaseous or colloidal silica, as well as surfactants, etchants and other addi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00B08B7/04B08B3/02B08B3/08B08B7/00H01L21/02H01L21/304H01L21/306H01L21/3105H01L21/321
CPCB08B7/0092B08B3/08H01L21/30625H01L21/02065H01L21/02074H01L21/02052H01L21/304
Inventor S·巴那基H·F·春
Owner RAVE N P