Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing LED chip with separate crystal grain vertical structure

A LED chip and vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult substrate processing, increased chip cost, and die geometry design constraints, so as to reduce post-processing, improve efficiency, Effect of Dislocation Density Reduction

Inactive Publication Date: 2008-05-21
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For GaN-based devices on sapphire substrates, the shape of the chip is limited due to the difference between the cleavage plane of sapphire and the GaN epitaxial layer, which restricts the design of the die geometry that is conducive to light extraction.
In addition, the use of difficult-to-process substrates increases the cost of chip fabrication

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing LED chip with separate crystal grain vertical structure
  • Method for preparing LED chip with separate crystal grain vertical structure
  • Method for preparing LED chip with separate crystal grain vertical structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Figure 3(a)-(f) shows the fabrication process of the discrete grain vertical structure light-emitting diode chip. In the figure, 1 indicates a sapphire substrate or a substrate with a GaN growth layer, and 2 indicates SiO 2 , 3 is an LED epitaxial wafer, 4 is a transparent electrode (Ni / Au), 5 is a reflective layer, 6 is a supporting substrate (Si or Cu), and 7 is a bonding metal (Au-Sn alloy). Below in conjunction with accompanying drawing, describe preferred embodiment one concrete steps in detail:

[0050] (a) Deposit SiO on sapphire substrate 1 2 2, and etch SiO 2 2 to define the island growth area and geometry. The size of the growth area is the size of the LED device, and the geometry of the growth area is polygonal and circular, which are conducive to light export. Figure 1 illustrates rectangles, hexagons and circles;

[0051] (b) On the substrate obtained in step (a), use MOCVD technology to grow the LED epitaxial layer, and perform P-type activation annea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention presents a tube core shape design with high luminous efficiency, which comprises: epitaxial growing on island area LED chip with discrete grain; after laser peeling, packaging discrete chip into LED with vertical structure and high luminous efficiency. Wherein, the epitaxial growth improves crystal quality and internal quantum efficiency; the shape of island area increases LED light power; the island growth benefits to release stress, reduce stress on interface between GaN and sapphire substrate and the damage and spectral shift during peeling, thereby, it can obtain LED with high performance.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and specifically relates to a method for preparing a power-type semiconductor light-emitting diode (LED) chip in combination with metal organic chemical vapor deposition (MOCVD) epitaxial growth technology, laser lift-off and reverse packaging technology. The invention proposes a method for directly obtaining discrete grain LED chips through growth, provides a new way for the geometric design of the LED chip not to be limited by the post-process of the LED chip, and is suitable for the preparation of new-type and high-power LEDs. Background technique [0002] Usually, LED is obtained by epitaxial growth on the substrate, thus, the preparation of LED is restricted by the crystal lattice structure of the substrate. The differences in lattice mismatch and thermal expansion coefficient cause a large number of dislocations due to the accumulation and release of stress in the epitaxial layer of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 于彤军秦志新杨志坚胡晓东陈志忠祁山陆羽康香宁商淑萍童玉珍丁晓民张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com