Fast response broad frequency range laser detector made of hetero-junctions material
A laser detector and fast-response technology, which is applied in the field of laser detectors, can solve the problems that the response band is not wide enough, the light response of the detector is not fast enough, and the laser pulse pulse laser waveform cannot be detected and measured, and the preparation method is simple, High sensitivity effect
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Embodiment 1
[0024] refer to figure 1 , to prepare a laser detector with a two-layer structure of silicon-doped lanthanum manganate thin film. The structure of the fast-response broadband laser detector made of heterojunction materials in the present invention will be described in detail below in conjunction with the specific preparation process. Beam epitaxy equipment, the substrate is an n-type silicon wafer 1, on which a 300nm-thick, p-type La 0.7 Sr 0.3 MnO 3 Photoresponsive material layer 2, forming La 0.7 Sr 0.3 MnO 3 / Si two-layer heterostructure sample, cut into a size of 1 × 1 cm 2 The detector core; use hydrofluoric acid to remove the silicon oxide on the silicon surface, weld the second electrode 4 of about φ2mm on the silicon surface with indium, and use indium on the La 0.7 Sr 0.3 MnO 3 Weld the first electrode 3 of about φ1mm on the surface of one corner of the film; use two φ0.1mm copper wires as electrode leads 6, and weld one end of the two φ0.1mm copper electrode ...
Embodiment 2
[0028] Laser molecular beam epitaxy equipment was selected to directly epitaxially grow 100nm thick, p-type La 0.7 Sr 0.3 MnO 3 Thin film photoresponsive material layer 2, prepared La 0.7 Sr 0.3 MnO 3 The / Si two-layer heterostructure sample is used as a chip, and a 2-inch chip is used to assemble the laser detector with the same two-layer structure as in Example 1.
Embodiment 3
[0030]Using a laser molecular beam epitaxy device, a layer of SrO was used as a buffer layer to epitaxially grow 800nm thick La on n-type silicon. 0.95 Ba 0.05 MnO 3 Thin film photoresponsive material layer 2, forming La 0.95 Ba 0.05 MnO 3 / Si two-layer heterostructure chip, in La 0.95 Ba 0.05 MnO 3 One edge of the thin film layer is vacuum-evaporated with a 0.5 mm wide platinum first electrode 3, and the rest is the same as the fast-response broadband laser detector made of heterojunction materials prepared according to Example 1.
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