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TFT LCD array base board structure and its producing method

A technology of array substrate structure and manufacturing method, which is applied in the directions of optics, instruments, electrical components, etc., can solve problems such as the influence of data transmission, and achieve the effects of reducing signal delay, increasing storage capacitance, and increasing density

Active Publication Date: 2008-12-10
BEIJING BOE OPTOELECTRONCIS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In traditional TFT LCD devices, the capacitance between the common electrode and the data signal will slightly affect the data transmission

Method used

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  • TFT LCD array base board structure and its producing method
  • TFT LCD array base board structure and its producing method
  • TFT LCD array base board structure and its producing method

Examples

Experimental program
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Embodiment Construction

[0043] Below in conjunction with description of drawings and preferred specific embodiments, the present invention is described in further detail:

[0044] Such as image 3 As shown, the array substrate of the TFT LCD has a group of gate scanning lines 1 and light blocking bars 12 parallel thereto, and a common electrode 11 perpendicular thereto, vertical light blocking bars 12 and a group of data scanning lines 5 . Each intersection of adjacent gate scan lines and data scan lines defines a pixel area. A pixel includes a TFT switch device, a pixel electrode 10 and a part of the common electrode 11 . Such as Figure 3aAs shown, the TFT device is composed of a gate electrode 2 , a gate insulating layer 4 , a semiconductor active layer 3 , and a source 6 and a drain 7 . The pixel electrode 10 is connected to the drain 7 of the TFT through the via hole 9 in the passivation layer. The above part is the same as a TFT pixel structure in the prior art. The TFT LCD pixel structure...

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PUM

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Abstract

The invention discloses a TFT LCD array substrate structure, comprising: a substrate; a gate scanning line; a gate electrode insulating layer; a data scanning line; line; the second light blocking bar, formed on the gate electrode insulating layer, parallel to the data scanning line; thin film transistor; passivation layer; pixel electrode; common electrode, formed on the gate electrode insulating layer, parallel to the data scanning lines, and the present invention can connect the common electrode and the light blocking strip together. The invention also discloses a manufacturing method of the array substrate structure. The structure of the present invention using the data line metal as the closed light-shielding strip can increase the storage capacitance, and using the longitudinal annular common electrode as the light-shielding strip can increase the density of the common electrodes and increase the aperture ratio compared with the traditional structure. In addition, compared with the traditional structure, the present invention has a good improvement on bad maintenance in the production process.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display (TFT LCD), in particular to a thin film transistor liquid crystal display array substrate structure and a manufacturing method thereof. Background technique [0002] Among flat panel display technologies, TFT LCD has the characteristics of low power consumption, relatively low manufacturing cost, and no radiation, and thus occupies a dominant position in the flat panel display market. TFT LCD devices are formed by combining array glass substrates and color filter glass substrates. Such as figure 1 , Figure 1a and Figure 1b Shown is the top view of a single pixel of the current mainstream amorphous silicon TFT (thin film transistor) structure and the cross-sectional schematic diagrams of A-A and B-B. It is a bottom gate structure with back channel etching. As shown in the figure, the array structure includes: a group of gate scanning lines 1 and a group of data scanning lines ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/133
CPCG02F1/136209G02F1/136213G02F2201/40H01L27/124H01L27/1255G02F1/136
Inventor 张弥王威
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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