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Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress

A technology of infrared focal plane and device chips, which is applied in radiation control devices and other directions, can solve problems such as device failure and large thermal mismatch, and achieve the effect of improving reliability

Active Publication Date: 2008-12-17
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a large thermal mismatch between the Si substrate and the HgCdTe epitaxial film, and the problem of device failure due to thermal stress still exists.

Method used

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  • Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress
  • Silicon base tellurium-cadmium-mercury gazing infrared focus plane device chip capable of releasing heat mismatch stress

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Embodiment Construction

[0009] Below in conjunction with the accompanying drawings, the present invention will be further described by taking the 320×240 chip as an example:

[0010] The silicon-based mercury cadmium telluride infrared focal plane array chip of the present invention includes a Si substrate 1, and an epitaxial film 2 of mercury cadmium telluride is grown on the Si substrate by an epitaxial method, and the epitaxial film 2 of the mercury cadmium telluride is grown on the mercury cadmium telluride thin film through a conventional device chip preparation process. A photosensitive element array 3 is formed on the surface, and then using the equipment conditions on the semiconductor device process line, a small hole 4 pattern is photoetched in the pixel isolation area, and then the HgCdTe material in the small hole is etched by using plasma dry etching technology Wear, and finally passivate the surface of the device chip.

[0011] The specific process of non-destructive etching of small ho...

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PUM

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Abstract

This invention discloses a silicon-base TeCdHg stared infrared focal plane device chip releasing thermal mismatch stress including a Si substrate, a TeCdHg epitaxial film combined with the substrate fixedly, a photosensor array formed on the TeCdHg epitaxial film by a normal device chip preparation technology, small holes releasing thermal-mistatch stress uniformly formed by plasma etch in an isolation region of every 10-20 photosensors so as to let the focal plane chip release thermal mismatch stress in local areas under room-low temperatures(80 K) and the performance of the photosensor will not become invalid because of the stress.

Description

technical field [0001] The invention relates to a mercury cadmium telluride infrared focal plane device chip, specifically a silicon-based mercury cadmium telluride staring infrared focal plane array device chip with a pixel size of 320×240 and above that can release thermal mismatch stress. Background technique [0002] The staring infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. It has important and extensive applications in military and civilian fields. [0003] The infrared focal plane device is a multi-layer device, including epitaxial substrate, HgCdTe thin film, Si readout circuit, interconnected In column, bonding glue and lead substrate, etc. The operating temperature of the device is usually around 80K. Due to the different thermal expansion coefficients between the materials of each layer, the focal plane device is subjected to great thermal stress during operation. Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144
Inventor 胡晓宁叶振华何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI