Slurry for cmp and method of polishing substrate using same

Abstract

The invention describes a polishing slurry and a preparation method thereof. Specifically, the present invention relates to a slurry for chemical mechanical polishing (hereinafter referred to as 'CMP'). When this polishing slurry is applied to CMP in STI (Shallow Trench Isolation) The polishing rate of the layer has high selectivity. This selectivity is essential for the production of ultra-highly integrated semiconductor silicon wafers (ultra-highly integrated semiconductor silicon wafers have certain design standards for D-RAMs of 256 megabytes or higher, such as a design standard of 0.13 μm or smaller). important. The invention includes a method and equipment for pretreatment of polishing particles, dispersion equipment and its operation method, dosage and addition method of chemical additives and a transfer sample device. The invention can produce high-performance nano-scale ceria slurry, which is very important for the CMP of ultra-highly integrated semiconductors with a thickness of less than or equal to 0.13 μm, especially the STI process.

Description

technical field [0001] The present invention relates to a slurry for polishing, especially chemical mechanical polishing (hereinafter referred to as 'CMP'). More specifically, the present invention relates to a method for preparing a high-performance polishing slurry and a method for polishing a substrate. In the manufacturing process of 256 megabytes or higher D-RAM ultra-highly integrated semiconductor silicon wafer (design standard ≤ 0.13 μm), chemical mechanical polishing is carried out with the slurry of the present invention, and the polishing of the oxide layer and the nitride layer The rate is highly selective and scratches are reduced. Background technique [0002] CMP is a semiconductor processing technology, that is, the polishing slurry is introduced between the clamped wafer and the polishing pad, and mechanical polishing is performed while the chemical corrosion polishes the processed surface. This method has been successfully developed by IBM Corporation of ...

AI Technical Summary

Problems solved by technology

The disadvantage is that the use of additives reduces the rate of elimination not only of the nitride layer, but also of the oxide layer

The size of the polishing particles in the ceria slurry is larger than that of the silica slurry, so it will scratch the surface of the wafer

[0009] However, the above technology only proposes the average particle size and range of polishing particles in the slurry, and does not control the large particles that cause microscopic scratches in actual production, so it is impossible to suppress the generation of microscopic scratches caused by large particles

[0010] In addition, the prior art does not analyze the number of large particles in slurries with different solid contents (ie, the concentration of polishing particles)

Therefore it is impossible to suppress the generation of microscopic scratches

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