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Storage device

A storage device and storage unit technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve problems such as data misreading

Inactive Publication Date: 2009-01-14
OL SECURITY LIABILITY CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is more likely to cause data misinterpretation

Method used

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Embodiment Construction

[0084] Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.

[0085] (first embodiment)

[0086] First, see figure 1 The overall structure of the strong medium memory according to the first embodiment will be described with reference to FIG. 2 . The ferroelectric memory of the first embodiment includes a memory cell array 1, a row decoder 2, a column decoder 3, a row address buffer 4, a column address buffer 5, a write amplifier 6, an input buffer 7, a read An output amplifier 8, an output buffer 9, a voltage generation circuit 10, and a time signal generation unit 11.

[0087] As shown in FIG. 2, the memory array 1 includes a plurality of memory cells 41 composed of only two ferroelectric capacitors 42a and 42b. The ferroelectric capacitors 42a and 42b are an example of the "capacitive means" of the present invention. The row decoder 2 is connected to the word line WL, and the column decoder 3 is connec...

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Abstract

A memory device capable of improving the degree of integration and effectively preventing false data reading is obtained. This memory device comprises a pair of bit lines extending in a prescribed direction, a word line arranged to intersect with the pair of bit lines and a memory cell, arranged between the pair of bit lines and the word line, consisting of two capacitance elements. Thus, the area of the memory cell is reduced and no reference voltage is required.

Description

technical field [0001] The present invention relates to storage devices, and more particularly, to storage devices for storing data. Background technique [0002] A strong medium memory which utilizes the polarization phenomenon of a strong medium to store data has long been known. This strong media memory is attracting attention because it is a high-speed, low-power consumption non-volatile memory. Therefore, people have been devoting themselves to the research and development of media storage. In this kind of strong medium memory, the writing / reading action of data is the same as DRAM (DynamicRandomAccessMemory, dynamic random access memory), and the typical storage unit of storage capacitive type strong medium memory has two kinds: single-transistor single-capacitance type (hereinafter referred to as 1T1C type) and double-transistor double-capacitor type (hereinafter referred to as 2T2C type). As for the 2T2C memory cell, it is described in, for example, "Low Power Con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/24G11C11/4063G11C11/22H01L21/8246H01L27/105
CPCG11C11/22
Inventor 酒井健松下重治石塚良行
Owner OL SECURITY LIABILITY CO