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Side lighting 10Gb/s APD tube core integrated with co-planar wave guide and its making process

A technology of coplanar waveguide and side entry, which is applied to the structure of the two-step conjoined tube core and its manufacturing process, can solve the problems of how to make the light entry surface that has not been mentioned, so as to reduce transmission loss, save time, and achieve good results. The effect of economic benefits

Active Publication Date: 2009-01-14
WUHAN TELECOMM DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there is also an introduction to the APD with side light entering, there is no mention of how to make the light entering surface

Method used

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  • Side lighting 10Gb/s APD tube core integrated with co-planar wave guide and its making process
  • Side lighting 10Gb/s APD tube core integrated with co-planar wave guide and its making process
  • Side lighting 10Gb/s APD tube core integrated with co-planar wave guide and its making process

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Embodiment Construction

[0068] Below in conjunction with accompanying drawing and embodiment describe in detail:

[0069] 1. The overall structure of the die

[0070] Such as figure 2 ,

[0071] 1) As mentioned above: the upper table is a combination shape of trapezoid 13-square 14-trapezoid 13;

[0072] Existing: the length of the short side of the trapezoid 13 on both sides is (8.0-8.5) μm, the length of the long side is (10.0-10.5) μm, and the height is (8.0-8.5) μm;

[0073] The side length of the square 14 in the middle is (10.0-10.5) μm.

[0074] 2) As mentioned above: the lower table is rectangular;

[0075] Existing: the length × width is (240-250) μm × (30-32) μm.

[0076] As mentioned above: the structure of the lower step is: from top to bottom, it is composed of interconnected SiO2+SiNx composite dielectric protection film 8 and InP buffer layer 9;

[0077] At present: the thickness of SiO2 is (300-350) nm, the thickness of SiNx is (100-150) nm, and the thickness of the InP buffer ...

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Abstract

The invention discloses a two-stage conjoined lateral-light 10Gb / s APD die integrated with coplanar waveguide, wherein it comprises from bottom to top: an InP semi-insulation substrate doped iron and a lower / upper stage; the technique comprises: MOCVD epitaxy, PECVD, photo etching, chemical etching, chemical cleaning, diffusing, RIE, electron beam evaporation, peeling off metal, passivating, and separating. This invention simplifies process, reduces cost and loss, and overcomes the smoothness for side surface.

Description

technical field [0001] The invention relates to a 10Gb / s APD for optical communication and integrated with a coplanar waveguide, and in particular to a structure of a two-step conjoined tube core and a manufacturing process thereof. Background technique [0002] With the continuous development of optical communication technology, Gigabit Ethernet and high-speed (10Gb / s) optical communication network have been developed rapidly and widely used. In an optical communication system with a transmission rate of 10Gb / s, a high-sensitivity optical receiver is one of the key components; it is generally required that the optical receiving sensitivity is better than -28dBm, and the optical response rate (or -3dB bandwidth) is greater than 8GHz. In the optical receiver, the key optoelectronic devices are photodetectors and low noise amplifiers. [0003] There are two main types of photodetectors: one is a PIN photodiode, and the other is an avalanche photodiode (APD for short); its mai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/18
CPCY02P70/50
Inventor 丁国庆
Owner WUHAN TELECOMM DEVICES